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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IRF3710ZLPBF-ND	IRF3710ZLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Power Dissipation (Max): 160W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	48 Order	1+: $1.1088 10+: $0.9828 100+: $0.7766 500+: $0.6022 1000+: $0.4755
STU5N65M6-ND	STU5N65M6	STMicroelectronics	View more Series: MDmesh M6 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 3.75V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 100V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	3000+: $0.3793
SIS184DN-T1-GE3 TR-ND	SIS184DN-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Gen IV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 17.4A (Ta), 65.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 30V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 1212-8S Package / Case: PowerPAK 1212-8S	1000 Order	3000+: $0.4314
STD30NF04LT-ND	STD30NF04LT	STMicroelectronics	View more Series: STripFET II Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 30 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.5135
1727-7114-2-ND	PSMN2R7-30BL,11 8	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3954pF @ 15V Power Dissipation (Max): 170W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $0.5386
IPU95R3K7P7AKMA 1-ND	IPU95R3K7P7AKMA 1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 800mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 40A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 400V Power Dissipation (Max): 22W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	500 Order	1+: $0.6678 10+: $0.5909 100+: $0.4672 500+: $0.3623 1000+: $0.286
CPH6355-TL-W-ND	CPH6355-TL-W	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 169 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 172pF @ 10V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-CPH Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	--
RTQ035P02TR-ND	RTQ035P02TR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Power Dissipation (Max): 1.25W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	--
AON6566-ND	AON6566	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 29A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V Power Dissipation (Max): 6W (Ta), 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	1000 Order	--
DMNH6021SK3-13- ND	DMNH6021SK3-13	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 23 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V Power Dissipation (Max): 2.1W (Ta) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-4L Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	1000 Order	2500+: $0.2101
DMT3003LFG-7-ND	DMT3003LFG-7	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 22A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V Power Dissipation (Max): 2.4W (Ta), 62W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	1000 Order	2000+: $0.2101
NVMFS5C670NLAFT 3G-ND	NVMFS5C670NLAFT 3G	ON Semiconductor	View more Series: Automotive, AEC-Q101 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 17A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 2V @ 53A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power Dissipation (Max): 61W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	5000+: $0.225
NVMFS4C03NWFT1G -ND	NVMFS4C03NWFT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 31.4A (Ta), 143A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 45.2nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3071pF @ 15V Power Dissipation (Max): 3.71W (Ta), 77W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	1000 Order	1500+: $0.2827
IPD90N06S407ATM A2-ND	IPD90N06S407ATM A2	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 40A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.3578
IPD30N08S222ATM A1TR-ND	IPD30N08S222ATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 80A Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power Dissipation (Max): 136W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.3811
NVMFS4841NT1G-N D	NVMFS4841NT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1436pF @ 12V Power Dissipation (Max): 3.7W (Ta), 112W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	1500+: $0.4222
APT20M38BVRG-ND	APT20M38BVRG	Microsemi Corporation	View more Series: POWER MOS V Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 38 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V Power Dissipation (Max): 370W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	1000 Order	60+: $8.5993
IXFB72N55Q2-ND	IXFB72N55Q2	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 258nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Power Dissipation (Max): 890W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264 Package / Case: TO-264-3, TO-264AA	1000 Order	--
APTM10DAM02G-ND	APTM10DAM02G	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 495A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Power Dissipation (Max): 1250W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	1000 Order	100+: $70.8428
497-11333-5-ND	STI8N65M5	STMicroelectronics	View more Series: MDmesh V Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 100V Power Dissipation (Max): 70W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
568-5729-5-ND	BUK9512-55B,127	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 3693pF @ 25V Power Dissipation (Max): 157W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
IRF9Z34STRL-ND	IRF9Z34STRL	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRFIBC20G-ND	IRFIBC20G	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	1000 Order	--
IRFR420-ND	IRFR420	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRF7204-ND	IRF7204	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Power Dissipation (Max): 2.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRFBC40LCL-ND	IRFBC40LCL	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IXFT52N30Q-ND	IXFT52N30Q	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Power Dissipation (Max): 360W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	1000 Order	1+: $0
IRFU3709-ND	IRFU3709	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V Power Dissipation (Max): 120W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--
IRF7433TR-ND	IRF7433TR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 8.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.7A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1877pF @ 10V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
IRF7807VD2TR-ND	IRF7807VD2TR	Infineon Technologies	View more Series: FETKY Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs (Max): 20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
IRLU7821-ND	IRLU7821	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Power Dissipation (Max): 75W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--
IRLU2905Z-ND	IRLU2905Z	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
64-9146TR-ND	64-9146	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 32A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 71nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 6580pF @ 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET MT Package / Case: DirectFET Isometric MT	1000 Order	1+: $0
TPCA8008HTE12LQ TR-ND	TPCA8008-H(TE12 L,Q	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 580 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
IRC644PBF-ND	IRC644PBF	Vishay Siliconix	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	1000 Order	1+: $0
FDD6512A-ND	FDD6512A	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 10.7A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 21 mOhm @ 10.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 10V Power Dissipation (Max): 3.8W (Ta), 43W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
FQPF18N50V2-ND	FQPF18N50V2	ON Semiconductor	View more Series: QFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 265 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V Power Dissipation (Max): 69W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
IPB09N03LAT-ND	IPB09N03LAT	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 20A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1642pF @ 15V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
SPD100N03S2L04T -ND	SPD100N03S2L04T	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 100A Gate Charge (Qg) (Max) @ Vgs: 89.7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-5 Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	1000 Order	1+: $0
FQD7N20TM-ND	FQD7N20TM	ON Semiconductor	View more Series: QFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 690 mOhm @ 2.65A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--

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