BUK9512-55B,127

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	157W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3693pF @ 25V
Vgs (Max):	±15V
Gate Charge (Qg) (Max) @ Vgs:	31nC @ 5V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	10 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

＜h2＞BUK9512-55B,127 Application Field and Working Principle＜/h2＞ The BUK9512-55B,127 is a type of single field effect transistor (FET) and is designed to switch as fast as possible without generating a lot of noise or interference. It is ideal for a wide range of applications in both low-power and high-power switching circuits, such as audio amplifiers, power switching circuits, and motor control circuits.Typically, devices used for switching involve two electrodes, which separate the charges in the form of a linear flow. In a field-effect transistor, there is only one electrode, called a gate, which applies a voltage to a semiconductor material, called the channel, to control the flow of current in the device. This makes FETs much more efficient and faster than other types of transistors.The BUK9512-55B,127 is a N-channel enhancement-mode metal oxide semiconductor field effect transistor (MOSFET). The device is constructed of a silicon substrate with an oxide layer between the substrate and the metal gate. An external voltage (typically a few volts) applied to the gate creates a voltage difference across the oxide layer, which can then be used to control the flow of current through the channel. In enhancement-mode FETs, when no voltage is applied to the gate, the device is turned off and no current can flow through the device. As the gate voltage is increased, the channel is opened and current can flow from the drain to the source. This is known as the “pinch-off” voltage. When the voltage is reduced again, the channel is closed and current stops flowing. The key advantages of using N-channel MOSFETs such as BUK9512-55B,127 are their high switching speeds and low power consumption. The device is designed to handle large amounts of current without generating a lot of noise or interference. It also has a very low forward voltage drop, which means it is extremely efficient. All of these benefits make the BUK9512-55B,127 ideal for applications such as power switching circuits, motor controllers, and audio amplifiers. In applications such as motor control circuits, the BUK9512-55B,127 can be used to quickly switch the motor on and off depending on the input signal. When the gate voltage is applied, current can flow through the channel and this causes the motor to start. When the voltage is removed, the channel is closed and the motor will stop. The BUK9512-55B,127 can also be used in audio amplifiers to switch the signal from the audio source to the amplifier. When the gate voltage is applied, the signal is sent to the amplifier and the audio is amplified. When the voltage is removed, the signal is cut off and the audio is not amplified. In summary, the BUK9512-55B,127 is a single N-channel enhancement-mode MOSFET designed to switch as fast as possible without generating a lot of noise or interference. It is suitable for a variety of applications such as power switching circuits, motor controllers, and audio amplifiers. It also has a low forward voltage drop, making it extremely efficient.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description