
Allicdata Part #: | IRF7433TR-ND |
Manufacturer Part#: |
IRF7433TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 12V 8.9A 8-SOIC |
More Detail: | P-Channel 12V 8.9A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1877pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 8.7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8.9A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF7433TR is an increasingly popular voltage-controlled field-effect transistor (FET) featured in a range of electronic circuits. It is a single N-MOSFET (NMOS transistor) packaged in a TO-220F package, with an internal shield between the drain-source pins and a drain-gate pin.
The IRF7433TR is an advanced technology version of the standard IRF7433. The TR version has a low gate threshold voltage, a low RDS ON resistance, and a high current-handling capability. This makes it especially suitable for web browsing and broadband communications applications, such as in cell phones, Wi-Fi routers, GPS navigation systems, and automotive electronics.
The IRF7433TR is a low voltage, high-voltage FET, operating from 5 to 20 volts. It is also able to handle large currents, up to 24A. This makes it especially suitable for high-power applications such as LED lighting, motors, and power electronics.
Although the IRF7433TR is primarily used as a switch in higher frequency circuits, it can also be used in analog circuits. It has a low input impedance and a high input-gate capacitance, making it well-suited for linear applications, such as signal processing, video electronics and active filters.
The working principle of the IRF7433TR is simple. The FET is activated by applying voltage to the gate. This voltage attracts electrons from the source, creating an electric field in the channel between the source and the drain. Current can then flow through the field, between the source and the drain. The gate voltage controls the amount of current that can flow through the channel.
In addition to its wide range of applications, the IRF7433TR is also an ideal choice for thermal protection. It has an integrated shutoff feature that limits the channelcurrent and shunt voltage to protect the FET from overheating. This makes it suitable for use in a range of power management applications, including automotive electronics, robots, and renewable energy systems.
The IRF7433TR is an ideal choice for a wide range of circuits and applications, due to its low gate threshold voltage, low input impedance and integrated shutoff feature. Its high current-handling capabilities and widespread use make it ideal for high-power applications, while its low input capacitance ensures that it is reliable in analog circuits. Its thermal protection feature makes it suitable for use in a range of power management applications.
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