Allicdata Part #: | FDD6512A-ND |
Manufacturer Part#: |
FDD6512A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 10.7A D-PAK |
More Detail: | N-Channel 20V 10.7A (Ta), 36A (Tc) 3.8W (Ta), 43W ... |
DataSheet: | FDD6512A Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 43W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1082pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 10.7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 10.7A (Ta), 36A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FDD6512A is a single field-effect transistor (FET) used in many electronic applications, particularly in radio frequency (RF) and switching. It is considered to be the fastest type of FET and is often used as a power amplifier in radio or television broadcasting. FDD6512A has excellent performance characteristics, making it suitable for a variety of uses in commercial and industrial applications.
But what makes FDD6512A so reliable and suitable for these applications? How does it work? The answer lies in its working principle.
Essentially, FDD6512A operates by modulating the flow of electrons between two terminals during its operation. This occurs in two stages: first, the transistor is switched on, allowing electrons to travel from one terminal to the other. This is known as the channel-forming stage. Then, during the channel-forming stage, electrons flow freely between the two terminals, forming a channel for the electrons to travel through with minimal resistance. This is known as the channel-forming stage.
FDD6512A is a N-channel MOSFET, meaning the channel is made up of an n-type semiconductor. This is important for controlling the conduction of electrons between the two terminals. When an electrical current is applied to the terminals, the electrons move from the drain terminal to the source terminal. This flow of electrons is dependent on the control gate voltage and the drain-to-source voltage, which are known as the gate-source voltage (VGSS) and the drain-to-source voltage (VDS), respectively. When these two voltages are balanced, current flow is allowed to occur – this is known as the transistor’s "on" state. When the VGSS and the VDS are unbalanced, the transistor is said to be in the "off" state and current flow is prevented.
FDD6512A also has a wide range of applications. It can be used to control the flow of large amounts of current in many industrial, consumer, and automotive applications. It can also be used in high-power RF switching applications, especially those requiring high switching speeds and high levels of efficiency. It is also widely used in applications such as electric motors, cellular phones, power supplies, and consumer electronics.
In conclusion, FDD6512A is an excellent choice for a wide range of applications due to its fast switching speed, high efficiency, and excellent thermal stability. Its working principle and construction are relatively simple, making it easy to use and reliable for many types of applications. Its impressive performance characteristics make it suitable for many commercial and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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