PSMN2R7-30BL,118

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The PSMN2R7-30BL-118 is a General Purpose N-Channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) from Infineon Technologies. It is a single device, meaning it is composed of only one transistor. It is one of the most common types of transistor found in modern electronic circuits, given its wide range of applications.

A MOSFET is a transistor that is capable of controlling a high electric current with a low voltage, and can also be used to amplify electrical signals. It does so by using a three-terminal gate input that acts as an electronic switch, controlling the current flowing between its source and drain pins. The PSMN2R7-30BL-118 is a particular type of this device, called an n-channel enhancement MOSFET, which operates by using an applied gate-voltage to increase the amount of current flowing between its source and drain pins.

Due to its characteristics, the PSMN2R7-30BL-118 is often used in a variety of electronics applications that require controlled levels of current flow, such as in calculators, computers, audio systems and televisions. Its low voltage requirements, low power consumption and large current efficiency also makes it very suitable for use in battery operated portable devices. Furthermore, it is also used in high power applications due to its good switching performance and high thermal stability.

The PSMN2R7-30BL-118 is rated for drain-source breakdown voltages of 20V and maximum drain-source breakdown voltages of 30V. It also has a high maximum drain current of 15A and a high power dissipation of 196W. In addition, it has high Input capacitance of 80pF, fast switching speeds and low on-state resistance. This makes the device highly flexible and ideal for use in a range of different applications.

In terms of packaging, the PSMN2R7-30BL-118 is available in TO-Leadless packages, which are optimized for space saving and improved performance. It is also designed with safety features such as ESD protection, which helps prevent it from being damaged by high voltages.

In conclusion, the PSMN2R7-30BL-118 is a versatile and reliable single n-channel enhancement MOSFET that is highly suitable for a wide range of electronics applications. Its low voltage requirements and low power consumption make it very cost-effective and suitable for use in portable devices, while its advanced package and safety features make it a great choice for high power applications.

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