NVMFS5C670NLAFT3G

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The NVMFS5C670NLAFT3G is a depletion-mode enhancement-mode type vertical DMOS field-effect transistor. Its main characteristics are drain-source breakdown voltage (BVDSS) up to 70V, drain current (ID) of 1.25A, and power dissipation (PD) of 0.75W. This device is suitable for various applications including load-switching, and audio/video switching.

The NVMFS5C670NLAFT3G is typically used in the application of high-side load-switching and high-current, high-voltage audio/video switching. It has a low gate charge and a low on-resistance, and is suitable for applications such as load switches in automotive and industrial applications, high-current switch, and even audio/video switching, where high current and high voltage are needed.

The NVMFS5C670NLAFT3G works on the principle of the bipolar junction transistor, which is a three-terminal device. The three terminals are called sources, drains, and gates. A voltage applied to the gate terminal of the device creates a field that controls the current between the source and drain terminals. The gate terminal is also called the control terminal as it controls the current between the source and drain. The gate is negative with respect to the substrate and hence, the device is said to be a Depletion Mode MOSFET. This means that the device is normally “on”, and the gate voltage is required to turn it “off”.

The NVMFS5C670NLAFT3G is a cost-effective DMOS FET that provides strong performance and low on-resistance. It requires a low gate charge and offers a wide operating temperature range and improved optimized frequency response. It is used in applications including load-switching, H-bridge circuits, high-side switching, audio/video switching etc. Due to its low gate charge, the device operates with minimal switching losses, making them a great choice for high frequency circuits. The device can operate at high voltages (up to 70V) and currents (up to 1.25A).

In summary, the NVMFS5C670NLAFT3G is a depletion-mode enhancement-mode type DMOS field-effect transistor that has a low on-resistance and wide range of operating temperatures. This device is used mainly for high-side load-switching and audio/video applications, and is characterized by a drain-source breakdown voltage (BVDSS) up to 70V, a drain current (ID) of 1.25A, and a power dissipation (PD) of 0.75W. It works on the principle of a bipolar junction transistor, in which a negative gate voltage is applied to turn the device “off.” This device is a cost-effective choice for various high-voltage, high-current switching applications.

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