NVMFS4841NT1G

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.7W (Ta), 112W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1436pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	7 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	16A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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The NVMFS4841NT1G is a series of single-level power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) that boasts advanced performance and has a wide range of application in the market. This component is designed to provide various strengths and reliability that are not achievable with electromechanical parts, such as with connectors. This component provides excellent power efficiency, switching speed, and gate capacitance among other features.The NVMFS4841NT1G is an N-Channel, single-level power MOSFET. Those sorts of MOSFETs are normally used as a switch in a variety of circuit designs. This component is suitable for power supplies and other power related applications. It has great switching ability and can handle large amounts of power with ease.Its wide range of application fields includes series and parallel circuit designs, both high-side and low-side switches, Buck and DC-DC conversion, motor drive and switching, and even power amplification. This component is also excellent for pulse width modulation, high frequency switching, low-noise amplifier designs, and current switching applications.The NVMFS4841NT1G operates using principle of MOSFETs, which is an acronym for Metal-Oxide-Semiconductor Field-Effect Transistor. This component has a source, gate and drain which are connected through an oxide layer. The MOSFET is subject to a specific control voltage between the gate and the source, and provides voltage amplification and current switching features.In a normal usage case, MOSFETs have a linear relationship between the drain current, ID and drain source voltage, VDS due to their nature. When the operating VDS is low, the drain current is restricted to what is known as the threshold voltage, Vth. When the VDS increases beyond the Vth, the drain current, ID , increases quickly and is proportional to the proportional of (VDS – Vth)^2.The NVMFS4841NT1G, being a power MOSFET, carries an excellent switching capability. It has an On/Off current handling capability that can manage as much as 48Amps and 41Volts. It has a Max gate capacitance of 12nC and a breakdown voltage range spanning -15V to +100V among many other features.Due to the amount of power this component can handle, it is naturally highly efficient. This component has a low gate charge, which allows for faster switching between the on and off states. This component also has a pointed transfer curve and a low reverse transfer capacitance for best performance in any circuit design.Other features of the NVMFS4841NT1G include its low gate input capacitance, fast switching speed, low static drain-source on-resistance, and improved charge over perturbation, among many others. Ultimately, the NVMFS4841NT1G is an excellent single-level power MOSFET that boasts a wide range of applications and reliable performance. Its low gate input capacitance, fast switching speed, low static drain-source on-resistance and improved charge over perturbation make it an ideal component for a variety of circuit designs. From motor drives to power supplies and amplifiers, the NVMFS4841NT1G delivers great performance, making it a highly sought-after component in the market.

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