Allicdata Part #: | NVMFS4C03NWFT1G-ND |
Manufacturer Part#: |
NVMFS4C03NWFT1G |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 31.4A SO8FL |
More Detail: | N-Channel 30V 31.4A (Ta), 143A (Tc) 3.71W (Ta), 77... |
DataSheet: | NVMFS4C03NWFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.28273 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.71W (Ta), 77W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3071pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.1 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 31.4A (Ta), 143A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NVMFS4C03NWFT1G is an n-channel logic level Mosfet, which is specifically tailored for high-current and low voltage applications. The device is built from a special die which enables it to operate at 8.5V on the source and drain, while offering extremely low on-resistance values - down to 0.034 ohm. This device makes the NVMFS4C03NWFT1G the perfect choice for applications that require high-current switching and low voltage operation.
The NVMFS4C03NWFT1G has many applications, such as switching power supplies, dc-dc converters, high-side power switches, buck regulators, and motor drive applications. In addition, it can also be used for single-packaged buck or boost converters that require ultra-low on-resistance output stages. This device is also capable of providing good stability and low output capacitance when used in low frequency dc-dc converters.
In regards to its working principle, the NVMFS4C03NWFT1G utilizes an insulated-gate FET (IGFET) which consists of a gate oxide layer, two metal contacts, and a body layer. The gate is connected to the drain terminal through the gate oxide layer, which limits the amount of voltage that can be applied across the two electrodes. The body layer acts as a voltage divider, and is able to regulate the amount of current that will flow through the device. As the current passes through the body layer, electrons will be attracted by a source of voltage, resulting in a change in the conductive state of the device.
When an external control signal is applied to the gate, it will cause electrons to be drawn towards the source terminal, thus creating an inversion layer in the body layer. This will then allow the current to pass through the source, and out through the drain. By controlling the amount of voltage applied to the gate, the current can be controlled, thereby allowing for switching applications. This phenomenon is otherwise known as the MOSFET Switching.
The NVMFS4C03NWFT1G is an ideal solution for applications that require low voltage operation and high-current switching. This device offers excellent off-state resistance and is capable of providing stable performance over a wide range of frequencies. Furthermore, with its low on-resistance values, the NVMFS4C03NWFT1G can also be used in a variety of other applications such as single-packaged buck or boost converters.
The specific data is subject to PDF, and the above content is for reference
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