
Allicdata Part #: | IRFU3709-ND |
Manufacturer Part#: |
IRFU3709 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 90A I-PAK |
More Detail: | N-Channel 30V 90A (Tc) 120W (Tc) Through Hole IPAK... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | IPAK (TO-251) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2672pF @ 16V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFU3709 is a single N-channel MOSFET. It is a field-effect transistor (FET), meaning that it passes an electrical current through a channel of MOSFETs in a controlled manner. This type of electronic component is useful in a wide array of electronic devices, from home computers and vehicles to locomotives and industrial equipment. The IRFU3709 is designed for flexibility and is suitable for use in a variety of applications across many industries due to its low RDS(on) and high voltage rating.
The IRFU3709 is usually used for switching applications that require a high current level or for applications where a low voltage drop is needed, such as in motor drives or solenoids. It can also be used to control the flow of current in audio amplifiers or digital logic circuits. This MOSFET can be used as a switch to enable and disable the flow of current where switching transients must be minimized, such as in low current circuits and integrated circuit applications.
The primary advantage of the IRFU3709 is its flexibility—it can be easily adapted to various applications and can be used to create complex circuit designs. Additionally, the FET is highly stable due to its low RDS(on) and high voltage rating. This makes it an excellent choice for use in applications with ever-changing conditions.
The working principle of the IRFU3709 is simple and follows the concept of field-effect transistors. A voltage is applied to the device’s gate terminal and an electric field is created between the gate and the channel. This creates a conductive path from the source to the drain of the device. The size of the electric field determines the amount of current that can flow through the channel and is thus controlled by the applied voltage. The higher the voltage, the more current can flow.
The IRFU3709 can be used in a variety of industries, such as automotive and industrial, for switching or for controlling current flow in motor drives or solenoids. It is also commonly used in audio amplifiers and digital logic circuits. This MOSFET also offers flexibility and is suitable for use in a variety of applications, such as low current circuits and integrated circuit applications.
The IRFU3709 is easy to use and can be easily adapted to various applications. Additionally, its low RDS(on) and high voltage rating allows for reliable performance in ever-changing conditions. As such, it is an excellent choice for switching or controlling the current flow of many electronic devices. Thanks to these features, the IRFU3709 is an excellent choice for MOSFETs in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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