IRF9Z34STRL Allicdata Electronics
Allicdata Part #:

IRF9Z34STRL-ND

Manufacturer Part#:

IRF9Z34STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 60V 18A D2PAK
More Detail: P-Channel 60V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface...
DataSheet: IRF9Z34STRL datasheetIRF9Z34STRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF9Z34STRL is a field-effect transistor (FET) that belongs to the family of single MOSFETs (Metal Oxide Semiconductor FETs). The device is specially designed to provide superior performance over a wide range of operating conditions. It is capable of high-speed switching with low channel resistance. It also offers low gate-source capacitance and low gate charge.

The metal oxide semiconductor field-effect transistor is a small-signal device that provides low current switching characteristics. It has a high input impedance and its control parameters, such as the gate voltage, affect its on-off state. A MOSFET is constructed based on the principle of a charge on a metal oxide gate that is placed next to a semiconductor channel. Applying a voltage to the gate causes electrons to be repelled from the area between the source (S) and drain (D) terminals, thus allowing current to flow from the source to drain.

The IRF9Z34STRL is a high-density n-channel enhancement-mode MOSFET that is ideal for use in a wide range of applications. It is capable of providing a very low output impedance and low gate-to-source capacitance. It has an excellent thermal stability and performance, even in harsher environments. The device has an exceptional on-resistance-to-gate voltage ratio and is capable of switching up to 3A and 100V.

The IRF9Z34STRL can be used in a variety of applications, such as in DC-DC converters, power management devices, power converters, high-speed switching, DC and AC motors, load controllers,and logic level transfer logic. It is suitable for use in high-speed switching applications, such as in switching power supplies, opto-isolators, and analog circuits. With its low gate charge and low gate-source capacitance, the IRF9Z34STRL is ideal for use in high-frequency and high-bandwidth applications.

In conclusion, the IRF9Z34STRL is a high-density and high-performance MOSFET that is designed for use in a variety of applications. It is capable of switching a high current, has an excellent thermal stability, and offers low gate-source capacitance and low gate charge. With its low output impedance and superior switching characteristics, the IRF9Z34STRL makes an excellent choice for use in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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