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 --1480 Item(s) In Category:Transistors - Bipolar (BJT) - Arrays, Pre-Biased

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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
XP0431300L XP0431300LTR-ND XP0431300L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz, 80MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SMINI6-G1
1000
Order

1+:

$0

 XP0431300LTR-ND Datasheet
XP0431N00L XP0431N00LTR-ND XP0431N00L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz, 80MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SMINI6-G1
1000
Order

--

 XP0431N00LTR-ND Datasheet
XP0438700L XP0438700LTR-ND XP0438700L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms, 1 kOhms
 Resistor - Emitter Base (R2): 47 kOhms, 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 30 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz, 80MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SMINI6-G1
1000
Order

1+:

$0

 XP0438700LTR-ND Datasheet
XP0121M00L XP0121M00LTR-ND XP0121M00L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: 5-TSSOP, SC-70-5, SOT-353
 Supplier Device Package: SMini5-G1
1000
Order

1+:

$0

 XP0121M00LTR-ND Datasheet
BCR08PNB6327XT BCR08PNB6327XTT
R-ND		 BCR08PNB6327XT Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Discontinued at Digi-Key
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 170MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR08PN
1000
Order

1+:

$0

 BCR08PNB6327XTTR-ND Datasheet
BCR08PNE6433HTMA1 BCR08PNE6433HTM
A1TR-ND		 BCR08PNE6433HTM
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 170MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR08PN
1000
Order

1+:

$0

 BCR08PNE6433HTMA1TR-ND Datasheet
BCR108SE6327BTSA1 BCR108SE6327BTS
A1TR-ND		 BCR108SE6327BTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 170MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR108S
1000
Order

1+:

$0

 BCR108SE6327BTSA1TR-ND Datasheet
BCR108SE6433HTMA1 BCR108SE6433HTM
A1TR-ND		 BCR108SE6433HTM
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 170MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR108S
1000
Order

1+:

$0

 BCR108SE6433HTMA1TR-ND Datasheet
BCR10PNB6327XT BCR10PNB6327XTT
R-ND		 BCR10PNB6327XT Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Discontinued at Digi-Key
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 130MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR10PN
1000
Order

1+:

$0

 BCR10PNB6327XTTR-ND Datasheet
BCR10PNE6327BTSA1 BCR10PNE6327BTS
A1TR-ND		 BCR10PNE6327BTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 130MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR10PN
1000
Order

1+:

$0

 BCR10PNE6327BTSA1TR-ND Datasheet
BCR116SE6327BTSA1 BCR116SE6327BTS
A1TR-NDTR-ND		 BCR116SE6327BTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 150MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR116S
1000
Order

1+:

$0

 BCR116SE6327BTSA1TR-NDTR-ND Datasheet
BCR119SE6327BTSA1 BCR119SE6327BTS
A1TR-NDTR-ND		 BCR119SE6327BTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 150MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR119S
1000
Order

1+:

$0

 BCR119SE6327BTSA1TR-NDTR-ND Datasheet
BCR119SE6433HTMA1 BCR119SE6433HTM
A1TR-NDTR-ND		 BCR119SE6433HTM
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 150MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR119S
1000
Order

1+:

$0

 BCR119SE6433HTMA1TR-NDTR-ND Datasheet
BCR133SB6327XT BCR133SB6327XTT
R-NDTR-ND		 BCR133SB6327XT Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Discontinued at Digi-Key
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 130MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR133S
1000
Order

1+:

$0

 BCR133SB6327XTTR-NDTR-ND Datasheet
BCR133SE6327BTSA1 BCR133SE6327BTS
A1TR-NDTR-ND		 BCR133SE6327BTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 130MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR133S
1000
Order

1+:

$0

 BCR133SE6327BTSA1TR-NDTR-ND Datasheet
BCR133SE6433BTMA1 BCR133SE6433BTM
A1TR-NDTR-ND		 BCR133SE6433BTM
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 130MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR133S
1000
Order

1+:

$0

 BCR133SE6433BTMA1TR-NDTR-ND Datasheet
BCR135SE6327BTSA1 BCR135SE6327BTS
A1TR-NDTR-ND		 BCR135SE6327BTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 150MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR135S
1000
Order

1+:

$0

 BCR135SE6327BTSA1TR-NDTR-ND Datasheet
BCR141SE6327BTSA1 BCR141SE6327BTS
A1TR-NDTR-ND		 BCR141SE6327BTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 130MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR141S
1000
Order

1+:

$0

 BCR141SE6327BTSA1TR-NDTR-ND Datasheet
BCR148SE6327BTSA1 BCR148SE6327BTS
A1TR-NDTR-ND		 BCR148SE6327BTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 100MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR148S
1000
Order

1+:

$0

 BCR148SE6327BTSA1TR-NDTR-ND Datasheet
BCR148SE6433HTMA1 BCR148SE6433HTM
A1TR-NDTR-ND		 BCR148SE6433HTM
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 100MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR148S
1000
Order

1+:

$0

 BCR148SE6433HTMA1TR-NDTR-ND Datasheet
BCR183SE6327BTSA1 BCR183SE6327BTS
A1TR-NDTR-ND		 BCR183SE6327BTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 200MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
1000
Order

1+:

$0

 BCR183SE6327BTSA1TR-NDTR-ND Datasheet
BCR183SE6433BTMA1 BCR183SE6433BTM
A1TR-NDTR-ND		 BCR183SE6433BTM
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 200MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
1000
Order

1+:

$0

 BCR183SE6433BTMA1TR-NDTR-ND Datasheet
BCR185SB6327XT BCR185SB6327XTT
R-NDTR-ND		 BCR185SB6327XT Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Discontinued at Digi-Key
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 200MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
1000
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 BCR185SB6327XTTR-NDTR-ND Datasheet
BCR185SE6327BTSA1 BCR185SE6327BTS
A1TR-NDTR-ND		 BCR185SE6327BTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 200MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
1000
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 BCR185SE6327BTSA1TR-NDTR-ND Datasheet
BCR198SE6327BTSA1 BCR198SE6327BTS
A1TR-ND		 BCR198SE6327BTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 190MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
1000
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 BCR198SE6327BTSA1TR-ND Datasheet
BCR22PNE6327BTSA1 BCR22PNE6327BTS
A1TR-ND		 BCR22PNE6327BTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 130MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR22PN
1000
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 BCR22PNE6327BTSA1TR-ND Datasheet
BCR22PNE6433HTMA1 BCR22PNE6433HTM
A1TR-ND		 BCR22PNE6433HTM
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 130MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR22PN
1000
Order

1+:

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 BCR22PNE6433HTMA1TR-ND Datasheet
BCR35PNE6327BTSA1 BCR35PNE6327BTS
A1TR-ND		 BCR35PNE6327BTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 150MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR35PN
1000
Order

1+:

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 BCR35PNE6327BTSA1TR-ND Datasheet
BCR35PNE6433HTMA1 BCR35PNE6433HTM
A1TR-ND		 BCR35PNE6433HTM
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 150MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR35PN
1000
Order

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 BCR35PNE6433HTMA1TR-ND Datasheet
BCR48PNE6327BTSA1 BCR48PNE6327BTS
A1TR-ND		 BCR48PNE6327BTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 70mA, 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms, 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 100MHz, 200MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR48PN
1000
Order

1+:

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 BCR48PNE6327BTSA1TR-ND Datasheet
BCR48PNE6433BTMA1 BCR48PNE6433BTM
A1TR-ND		 BCR48PNE6433BTM
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 70mA, 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms, 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 100MHz, 200MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR48PN
1000
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 BCR48PNE6433BTMA1TR-ND Datasheet
BCR08PNE6327BTSA1 BCR08PNE6327BTS
A1TR-ND		 BCR08PNE6327BTS
A1		 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 170MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-VSSOP, SC-88, SOT-363
 Supplier Device Package: PG-SOT363-6
 Base Part Number: BCR08PN
1000
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 BCR08PNE6327BTSA1TR-ND Datasheet
EMF5XV6T5 EMF5XV6T5-ND EMF5XV6T5 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN Pre-Biased, 1 PNP
 Current - Collector (Ic) (Max): 100mA, 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V, 12V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 270 @ 10mA, 2V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA / 250mV @ 10mA, 200mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 500mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SOT-563
 Base Part Number: EMF
1000
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 EMF5XV6T5-ND Datasheet
MUN5112DW1T1G MUN5112DW1T1G-N
D		 MUN5112DW1T1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SC-88/SC70-6/SOT-363
 Base Part Number: MUN51**DW1T
1000
Order

1+:

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 MUN5112DW1T1G-ND Datasheet
MUN5114DW1T1 MUN5114DW1T1-ND MUN5114DW1T1 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SC-88/SC70-6/SOT-363
 Base Part Number: MUN51**DW1T
1000
Order

1+:

$0

 MUN5114DW1T1-ND Datasheet
MUN5116DW1T1 MUN5116DW1T1-ND MUN5116DW1T1 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SC-88/SC70-6/SOT-363
 Base Part Number: MUN51**DW1T
1000
Order

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 MUN5116DW1T1-ND Datasheet
MUN5130DW1T1G MUN5130DW1T1G-N
D		 MUN5130DW1T1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SC-88/SC70-6/SOT-363
 Base Part Number: MUN51**DW1T
1000
Order

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 MUN5130DW1T1G-ND Datasheet
MUN5131DW1T1G MUN5131DW1T1G-N
D		 MUN5131DW1T1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SC-88/SC70-6/SOT-363
 Base Part Number: MUN51**DW1T
1000
Order

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 MUN5131DW1T1G-ND Datasheet
MUN5134DW1T1G MUN5134DW1T1G-N
D		 MUN5134DW1T1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SC-88/SC70-6/SOT-363
 Base Part Number: MUN51**DW1T
1000
Order

1+:

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 MUN5134DW1T1G-ND Datasheet
MUN5135DW1T1 MUN5135DW1T1-ND MUN5135DW1T1 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SC-88/SC70-6/SOT-363
 Base Part Number: MUN51**DW1T
1000
Order

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 MUN5135DW1T1-ND Datasheet
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