MUN5114DW1T1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MUN5114DW1T1 is a low voltage, dual N-channel, pre-biased ESD protection array that is specifically designed to protect high speed data lines from electrostatic discharge (ESD). The MUN5114DW1T1 is optimized to provide up to 4kV (human body model) IEC61000-4-2 ESD protection at a V BR of 12V. The MUN5114DW1T1 has a low turn-on voltage and excellent response time for both ESD pulses.

The MUN5114DW1T1 is designed free from latch-up, and features a high-sensitivity SCR triggering with integrated ESD protection diodes.

The MUN5114DW1T1 Combines pre-biased power–ESD protection and does not require the use of an external ESD voltage clamp circuit. This vastly simplifies the overall system design and improves robustness. The MUN5114DW1T1 is a great solution for applications that require a low-power/low-voltage/high-speed data rate solution with integrated ESD protection.

The MUN5114DW1T1 is a single-gate array, consisting of two n-type transistors with an internal pre-biased ESD protection diode. The device is designed with a built-in ESD protection circuit, which allows it to provide up to 4kV of IEC61000-4-2 ESD protection for high-speed data lines. The MUN5114DW1T1 is optimized for providing ESD protection at a V BR of 12V, and features a low turn-on voltage with excellent response to pulses of ESD as well as latch-up protection. The device also features high-sensitivity SCR triggering.

The MUN5114DW1T1 is a great solution for applications that require a low-power, low-voltage, high-speed data rate, integrated ESD protection solution. It is ideal for applications such as HDMI connectors, USB 1.x/2.x, and High-speed LVDS data lines. The MUN5114DW1T1 will protect your components from electrostatic discharge and provide a robust, cost-effective solution that is easy to implement.

The MUN5114DW1T1 features a low V BR of 12V and an internal pre-biased ESD protection diode, resulting in a very low turn-on voltage. This allows for faster response times for both electrostatic and latch-up protection. The device also features excellent IEC61000-4-2 ESD performance of up to 4kV. The MUN5114DW1T1 is a small, and easy to implement solution that provides robust protection for high-speed data lines.

The MUN5114DW1T1 is a pre-biased ESD array that is specifically designed to protect high-speed data lines from electrostatic discharge. The device integrates an internal ESD protection circuit which provides up to 4kV of IEC61000-4-2 ESD protection at a V BR of 12V. The MUN5114DW1T1 features a low turn-on voltage and excellent response time for both electrostatic and latch-up protection. It is the ideal solution for applications that require a low-power, low-voltage, high-speed data rate with integrated ESD protection.

The specific data is subject to PDF, and the above content is for reference