MUN5130DW1T1G Allicdata Electronics
Allicdata Part #:

MUN5130DW1T1G-ND

Manufacturer Part#:

MUN5130DW1T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.25W SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: MUN5130DW1T1G datasheetMUN5130DW1T1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Base Part Number: MUN51**DW1T
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Series: --
Resistor - Emitter Base (R2): 1 kOhms
Resistor - Base (R1): 1 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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MUN5130DW1T1G application field and working principle

The MUN5130DW1T1G is a PNP pre-biased Darlington transistor. It produces a high current gain of 800 and is thus well-suited for drivers and other applications in which a high current must be activated with only a small current. Products using the MUN5130DW1T1G are designed to reduce or eliminate the need for external current limiting resistors, reducing complexity, cost and space requirements.

The MUN5130DW1T1G is manufactured in a compact SOT-23 package and features a Vce(sat) of 350mV and a high breakdown voltage of 600V. The transistor has a wide common-emitter current gain range of 100 to 800, which makes it suitable for a wide range of applications, including high-side and low-side drivers, phase control and motor control.

The basic working principle of a PNP Darlington transistor is very simple. It is composed of two transistors in series: a PNP (emitter-base) and an NPN (collector-base). The NPN transistor is the \'driver\', it amplifies the input signal, and the PNP transistor is the \'load\', it actually carries the current. When a small current is applied to the base-emitter junction of the NPN transistor, a larger current is amplified and applied to the PNP transistor, and this larger current is then used to activate the device.

The MUN5130DW1T1G PNP Darlington transistor can operate in several applications, such as in high-side and low-side drivers, surge and EMP (electro-magnetic pulse) protection circuits, power control, switching power supplies, LED driver circuits, motor control and shunts. It also has a wide operating temperature range, making it suitable for use in harsh industrial or automotive environments.

The MUN5130DW1T1G is a robust and highly reliable transistor, due to its high current gaining and wide temperature range. It is also a highly efficient device, as it does not require any external current limiting resistors and provides high accuracy and reliability. Its small size and low cost make it an attractive choice for designers looking for a dependable and efficient solution.

The specific data is subject to PDF, and the above content is for reference

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