
Allicdata Part #: | MUN5130DW1T1G-ND |
Manufacturer Part#: |
MUN5130DW1T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 3 @ 5mA, 10V |
Base Part Number: | MUN51**DW1T |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 1 kOhms |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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MUN5130DW1T1G application field and working principle
The MUN5130DW1T1G is a PNP pre-biased Darlington transistor. It produces a high current gain of 800 and is thus well-suited for drivers and other applications in which a high current must be activated with only a small current. Products using the MUN5130DW1T1G are designed to reduce or eliminate the need for external current limiting resistors, reducing complexity, cost and space requirements.
The MUN5130DW1T1G is manufactured in a compact SOT-23 package and features a Vce(sat) of 350mV and a high breakdown voltage of 600V. The transistor has a wide common-emitter current gain range of 100 to 800, which makes it suitable for a wide range of applications, including high-side and low-side drivers, phase control and motor control.
The basic working principle of a PNP Darlington transistor is very simple. It is composed of two transistors in series: a PNP (emitter-base) and an NPN (collector-base). The NPN transistor is the \'driver\', it amplifies the input signal, and the PNP transistor is the \'load\', it actually carries the current. When a small current is applied to the base-emitter junction of the NPN transistor, a larger current is amplified and applied to the PNP transistor, and this larger current is then used to activate the device.
The MUN5130DW1T1G PNP Darlington transistor can operate in several applications, such as in high-side and low-side drivers, surge and EMP (electro-magnetic pulse) protection circuits, power control, switching power supplies, LED driver circuits, motor control and shunts. It also has a wide operating temperature range, making it suitable for use in harsh industrial or automotive environments.
The MUN5130DW1T1G is a robust and highly reliable transistor, due to its high current gaining and wide temperature range. It is also a highly efficient device, as it does not require any external current limiting resistors and provides high accuracy and reliability. Its small size and low cost make it an attractive choice for designers looking for a dependable and efficient solution.
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