Allicdata Part #: | MUN5135DW1T1-ND |
Manufacturer Part#: |
MUN5135DW1T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | MUN5135DW1T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | MUN51**DW1T |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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MUN5135DW1T1 transistors is a type of bipolar junction transistor (BJT) Array, Pre-Biased. The circuit of this device already includes components for the first of two bias steps required for switching applications. It is primarily used for driving large loads, such as high power motors, heaters, and lamps, from controlled sources. It has enhanced power handling capability and the ability to dissipate heat 2 times faster than other comparable transistors.
MUN5135DW1T1 transistors have both a low voltage and high voltage pre-biasing feature that helps to reduce system complexity. Pre-biasing helps to increase the efficiency and power of the system because it allows the transistor to switch faster and requires less current draw. Furthermore, it allows for a reduced package size, and offers better control over the system\'s performance. The device is also available in multiple packages, such as PDIP and SOIC, to suit various applications.
The working principle of MUN5135DW1T1 transistors is based on the ability of an electric current to control other currents by operating as an amplifier. When a small current is applied to the base of the transistor, the larger current at the collector is allowed to pass through the transistor to the emitter. This current is amplified by the transistor and can be used to control larger currents. The device is capable of driving currents up to 30 amps and can be used in a variety of applications, such as automotive, industrial, medical, and communications.
MUN5135DW1T1 transistors are designed for a wide range of applications and environments. They have an operating temperature range of -40°C to 150°C, and can withstand vibration levels of up to 10G (9.81m/s2). The device is also capable of withstanding voltage overloads of up to 200V and can handle a wide range of frequencies. As well as these features, the device has a high power-on reset feature that helps protect the circuit from any power surges.
MUN5135DW1T1 transistors are well-suited for a wide range of uses and applications, such as general-purpose switching, motor control, audio amplifiers and DSPs. They also provide excellent thermal performance and are capable of withstanding high temperature and voltage loads. Therefore, they can be used in various commercial and industrial settings, where efficient power handling and reliable performance are needed.
In conclusion, MUN5135DW1T1 transistors are a type of bipolar junction transistor (BJT) array, pre-biased device designed for enhanced power handling capability and efficient thermal performance. It is capable of withstanding high temperature and voltage overloads, and has a wide operating temperature range and excellent vibration resistance. The device is well-suited for a variety of uses, such as general-purpose switching, motor control, audio amplifiers, and DSPs.
The specific data is subject to PDF, and the above content is for reference
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