Allicdata Part #: | MUN5134DW1T1G-ND |
Manufacturer Part#: |
MUN5134DW1T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | MUN5134DW1T1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | MUN51**DW1T |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The MUN5134DW1T1G bipolar junction array transistor is one of the latest advancements in integrated circuit technology. It is a two-stage transistor with up to 8 outputs and up to 4 inputs. Its use is highly versatile in all types of electronic circuits and applications. It is ideal for a variety of applications requiring high switching speeds, low power consumption, and minimal thermal noise.
The MUN5134DW1T1G transistors have been designed for applications that require pre-biased output circuitry and low distortion performance. It contains an active pull-up network in the base of the device that stabilizes the collector-emitter voltage. This active pull-up network can be used to reduce the thermal noise in applications with low input frequencies. It also eliminates the need for additional bias circuitry to ensure proper operation of the system.
The MUN5134DW1T1G Transistor also features additional protection, such as overvoltage protection, soft start, open collector protection, and more. These features provide extra safety and reliability when using the transistors in circuits.1
The working principle of the MUN5134DW1T1G Transistor is relatively straightforward. It is a bipolar transistor array with a common collector. This means that the transistors are arranged as either NPN or PNP transistors, meaning each has both an N-type and a P-type material. This allows current to flow in either direction. When voltage is applied across the base and collector connection, current flows through the device. This current can be adjusted by changing the base-drive voltage.
The MUN5134DW1T1G Transistor is ideal for use in high-frequency, low-power applications, such as motor control, power drivers, and H-bridge circuits, to name a few. It also has low distortion performance, making it suitable for digital audio, high-speed data transmission, and video applications. Its high speed of response and durability make it suitable for fast switching, low power applications. It is also a great option for when a tight space constraint is a factor.
In summary, the MUN5134DW1T1G Transistor is an ideal choice for a variety of applications. It is a robust device with a simple yet versatile design that provides excellent switching performance, low power consumption, and immense reliability. It is highly suitable for a number of applications, from motor control and power drivers, to high-frequency data transmission and digital audio.
1 Source: https://www.onsemi.com/pub/Collateral/MUN5134DW1T1G-D.PDFThe specific data is subject to PDF, and the above content is for reference
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