MUN5131DW1T1G Allicdata Electronics
Allicdata Part #:

MUN5131DW1T1G-ND

Manufacturer Part#:

MUN5131DW1T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.25W SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: MUN5131DW1T1G datasheetMUN5131DW1T1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Base Part Number: MUN51**DW1T
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Series: --
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The MUN5131DW1T1G is an pre-biased array of NPN transistors which provides four separate NPN transistors in a single package. This device is used in a wide variety of applications, such as in high-speed switching, audio amplifier applications, and even automotive applications. It features two independent NPN transistor arrays and one PNP transistor array in a single package.

The MUN5131DW1T1G has four different components in its array. The first two are NPN transistors, which function as current sources and sinks. The third component is a PNP transistor, which functions as an input device. Finally, the fourth component is a bypass diode, which helps make the device more reliable when used in high-speed switching applications.

The main application of the MUN5131DW1T1G is in high-speed switching applications. In this application, its four separate transistors act as an individual switch, allowing for fast and accurate switching between two different input signals. Additionally, the device\'s PNP transistor acts as an input device, allowing for faster response times and better signal quality.

The working principle of the MUN5131DW1T1G is fairly straightforward. The four transistors in the array are connected in series, with the two NPN transistors acting as current sources and sinks. When an input signal is applied to the device, the PNP transistor act as the input device, controlling the flow of current in the circuit. As the current is allowed to flow, either the NPN transistors or the PNP transistor will conduct, allowing the current flow to be transferred to the output. In this way, the device acts as a switch between two different signals.

The MUN5131DW1T1G is an ideal choice for applications like high-speed switching and audio amplifier applications. Its wide range of features and its construction make it an excellent choice for these types of applications. Additionally, its use of a PNP transistor as an input device helps to reduce power and current consumption in the device, resulting in better efficiency and reliability.

Overall, the MUN5131DW1T1G is an excellent choice for pre-biased array of NPN transistors. Its versatile range of features, including current sources and sinks, a bypass diode, and a PNP transistor make it an ideal choice for a variety of applications. Additionally, its efficient use of power and current makes it an excellent choice for high-speed switching and audio amplifier applications.

The specific data is subject to PDF, and the above content is for reference

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