Cap array 2uf 100v 6smd - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
497-15957-5-ND	STFI15N60M2-EP	STMicroelectronics	View more Series: MDmesh M2 Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 378 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V Power Dissipation (Max): 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, IPak	1496 Order	1+: $1.6443 10+: $1.483 100+: $1.1917 500+: $0.9268 1000+: $0.7679
SIHG15N60E-GE3- ND	SIHG15N60E-GE3	Vishay Siliconix	View more Series: E Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 100V Power Dissipation (Max): 180W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	470 Order	1+: $2.4192 10+: $2.1609 100+: $1.7719 500+: $1.4348 1000+: $1.2101
IPD50R3K0CEBTMA 1TR-ND	IPD50R3K0CEBTMA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 3 Ohm @ 400mA, 13V Vgs(th) (Max) @ Id: 3.5V @ 30A Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 84pF @ 100V Power Dissipation (Max): 18W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.1141
SIHD6N65E-GE3-N D	SIHD6N65E-GE3	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V Power Dissipation (Max): 78W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	126 Order	--
497-15273-5-ND	STP12N50M2	STMicroelectronics	View more Series: MDmesh II Plus Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 100V Power Dissipation (Max): 85W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	49 Order	--
497-15269-5-ND	STF16N65M2	STMicroelectronics	View more Series: MDmesh M2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 718pF @ 100V Power Dissipation (Max): 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	411 Order	--
497-15456-2-ND	STB28N65M2	STMicroelectronics	View more Series: MDmesh M2 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 100V Power Dissipation (Max): 170W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.9581
IPU80R1K4CEAKMA 1-ND	IPU80R1K4CEAKMA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.3A, 10V Vgs(th) (Max) @ Id: 3.9V @ 240A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1500+: $0.3881
IPD50R950CEATMA 1TR-ND	IPD50R950CEATMA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V Vgs(th) (Max) @ Id: 3.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V Power Dissipation (Max): 53W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
497-14970-2-ND	STL9N60M2	STMicroelectronics	View more Series: MDmesh II Plus Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 860 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 100V Power Dissipation (Max): 48W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat (5x6) HV Package / Case: 8-PowerVDFN	1000 Order	--
IPD65R1K4CFDBTM A1TR-ND	IPD65R1K4CFDBTM A1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 100V Power Dissipation (Max): 28.4W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.3294
497-16961-ND	STF13N60DM2	STMicroelectronics	View more Series: MDmesh DM2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 365 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 100V Power Dissipation (Max): 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	915 Order	1+: $1.3167 10+: $1.1869 100+: $0.9536 500+: $0.7417 1000+: $0.6146
IPN70R1K5CEATMA 1TR-ND	IPN70R1K5CEATMA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 5W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: SOT-223-3	1000 Order	3000+: $0.1635
497-12852-2-ND	STD6N95K5	STMicroelectronics	View more Series: SuperMESH5 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V Power Dissipation (Max): 90W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.8607
497-8798-5-ND	STW7N95K3	STMicroelectronics	View more Series: SuperMESH3 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25C: 7.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 3.6A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1031pF @ 100V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	--
SIHA17N80E-E3-N D	SIHA17N80E-E3	Vishay Siliconix	View more Series: E Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2408pF @ 100V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	44 Order	1+: $3.5406 10+: $3.1626 100+: $2.5932 500+: $2.0999 1000+: $1.771
IPP65R600E6XKSA 1-ND	IPP65R600E6XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 210A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
SIHB24N65ET5-GE 3-ND	SIHB24N65ET5-GE 3	Vishay Siliconix	View more Series: E Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (DPak) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $2.3148
497-15016-5-ND	STI33N60M2	STMicroelectronics	View more Series: MDmesh II Plus Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 45.5nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1781pF @ 100V Power Dissipation (Max): 190W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	987 Order	1+: $3.5973 50+: $2.8918 100+: $2.6348 500+: $2.1335 1000+: $1.7994
497-13966-2-ND	STL15N65M5	STMicroelectronics	View more Series: MDmesh V Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 375 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V Power Dissipation (Max): 52W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat (5x6) Package / Case: 8-PowerVDFN	1000 Order	3000+: $1.1467
IPD65R650CEATMA 1-ND	IPD65R650CEATMA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 10.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650 mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 0.21mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 86W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.261
IPD60R460CEATMA 1TR-ND	IPD60R460CEATMA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 9.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 460 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 280A Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V Power Dissipation (Max): 74W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.2819
APTC90SKM60T1G- ND	APTC90SKM60T1G	Microsemi Corporation	View more Series: CoolMOS Packaging: Tray Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 462W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	1000 Order	100+: $29.8648
497-13975-5-ND	STP7N60M2	STMicroelectronics	View more Series: MDmesh II Plus Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 100V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1390 Order	1+: $1.0395 50+: $0.8317 100+: $0.7278 500+: $0.5644 1000+: $0.4456
497-11232-5-ND	STP4N52K3	STMicroelectronics	View more Series: SuperMESH3 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 334pF @ 100V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	4398 Order	--
TSM70N900CPROGT R-ND	TSM70N900CP ROG	Taiwan Semiconductor Corporation	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 482pF @ 100V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	5000 Order	2500+: $0.426
497-13533-ND	STFI20N65M5	STMicroelectronics	View more Series: MDmesh V Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 100V Power Dissipation (Max): 130W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, IPak	1465 Order	1+: $2.9421 10+: $2.6265 100+: $2.1536 500+: $1.7439 1000+: $1.4707
FCH041N65EFL4-N D	FCH041N65EFL4	ON Semiconductor	View more Series: FRFET, SuperFET II Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 5V @ 7.6mA Gate Charge (Qg) (Max) @ Vgs: 298nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 12560pF @ 100V Power Dissipation (Max): 595W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	254 Order	--
BSC12DN20NS3GAT MA1TR-ND	BSC12DN20NS3GAT MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 11.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125 mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id: 4V @ 25A Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.343
IPD50R399CP-ND	IPD50R399CP	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 399 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 3.5V @ 330A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 100V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IPI320N20N3GAKS A1-ND	IPI320N20N3GAKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 4V @ 90A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V Power Dissipation (Max): 136W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	500+: $1.234
SIHP22N65E-GE3- ND	SIHP22N65E-GE3	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2415pF @ 100V Power Dissipation (Max): 227W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
IPD60R380P6ATMA 1TR-ND	IPD60R380P6ATMA 1	Infineon Technologies	View more Series: CoolMOS P6 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 4.5V @ 320A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 877pF @ 100V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	5000 Order	--
STW9N80K5-ND	STW9N80K5	STMicroelectronics	View more Series: MDmesh K5 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 100V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	600+: $1.1665
SIHH28N60E-T1-G E3-ND	SIHH28N60E-T1-G E3	Vishay Siliconix	View more Series: E Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 98 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 129nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2614pF @ 100V Power Dissipation (Max): 202W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 8 x 8 Package / Case: 8-PowerTDFN	2979 Order	1+: $4.6557 10+: $4.1549 100+: $3.4071 500+: $2.7589 1000+: $2.3268
497-12270-2-ND	STL16N65M5	STMicroelectronics	View more Series: MDmesh V Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 299 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 100V Power Dissipation (Max): 3W (Ta), 90W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat (8x8) HV Package / Case: 8-PowerVDFN	1000 Order	1+: $0
FCH041N65F-F155 -ND	FCH041N65F-F155	ON Semiconductor	View more Series: FRFET, SuperFET II Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 5V @ 7.6mA Gate Charge (Qg) (Max) @ Vgs: 294nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 13020pF @ 100V Power Dissipation (Max): 595W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	1000 Order	--
BSZ12DN20NS3GAT MA1TR-ND	BSZ12DN20NS3GAT MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 11.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125 mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id: 4V @ 25A Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.344
497-18093-ND	STP8N120K5	STMicroelectronics	View more Series: MDmesh K5 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 100V Power Dissipation (Max): 130W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	--
497-16306-5-ND	STFU18N65M2	STMicroelectronics	View more Series: MDmesh M2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 330 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 100V Power Dissipation (Max): 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	946 Order	1+: $1.8459 50+: $1.4888 100+: $1.34 500+: $1.0422 1000+: $0.8635

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