STD6N95K5 Allicdata Electronics
Allicdata Part #:

497-12852-2-ND

Manufacturer Part#:

STD6N95K5

Price: $ 0.95
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 950V 9A DPAK
More Detail: N-Channel 950V 9A (Tc) 90W (Tc) Surface Mount DPAK
DataSheet: STD6N95K5 datasheetSTD6N95K5 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.86071
Stock 1000Can Ship Immediately
$ 0.95
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 90W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Series: SuperMESH5™
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 950V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD6N95K5 is a special type of transistor called a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). MOSFET is a three-terminal device with at least one gate electrode and two source and drain electrodes. It can provide high switching speeds with low-power consumption, making it ideal for power management applications.

The STD6N95K5 can be used in a wide range of applications, such as DC-DC power converters, power amplifiers, motor control system, lighting control, switching power supplies, and voltage monitoring. It is also suitable for applications such as automotive, consumer electronics, and power tools. The device\'s high speed switching capability allows for a high efficiency conversion of DC power.

The STD6N95K5 works based on the principle of electrostatic control. It is a voltage-controlled device which means that its output is determined by the voltage applied to its gate terminal. When the voltage at the gate terminal is equal to or greater than the trigger voltage of the MOSFET, electrons begin to flow from source to drain. As the voltage increases, more electrons are drawn in, creating a conductive channel between drain and source and supplying the load with power.

When the voltage at the gate terminal is reduced to less than the trigger voltage, the drain and source terminals become isolated, effectively turning off the device. The STD6N95K5 also has additional features such as reversibility, transconductance, and saturation voltage, which together ensure a precise operation of the device.

The STD6N95K5 device operates over a wide voltage range from 3V to 55V, making it suitable for a variety of applications. It also has a very low on-resistance (RDS(on)) and tight tolerance levels, making it ideal for high-speed, low-power applications. Finally, the device has a wide temperature range, allowing it to be used in extreme temperatures without any damage.

In conclusion, the STD6N95K5 is a versatile and efficient MOSFET which is suitable for a variety of different applications. It works by using the principle of electrostatic control and its properties such as reversibility, transconductance, and saturation voltage allow for precise operation. Its wide voltage and temperature range make it ideal for demanding applications.

The specific data is subject to PDF, and the above content is for reference

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