IPP65R600E6XKSA1 Allicdata Electronics
Allicdata Part #:

IPP65R600E6XKSA1-ND

Manufacturer Part#:

IPP65R600E6XKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 7.3A TO220
More Detail: N-Channel 650V 7.3A (Tc) 63W (Tc) Through Hole PG-...
DataSheet: IPP65R600E6XKSA1 datasheetIPP65R600E6XKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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Transistors, also known as semiconductor devices, are electronic components used to control currents in electronic circuits. A field-effect transistor (FET) is a type of transistor used as an electronic switch in a variety of applications. The IPP65R600E6XKSA1 FET is one such device specifically designed to operate in extreme conditions. It is designed to operate in the most challenging applications with a wide range of temperatures, from -55 to 175 °C.

The IPP65R600E6XKSA1 is a single N-channel FET with low on-resistance and low RDS(on). It has a current rating of 28A, a voltage rating of 600V, and a P.S. max rating of 980W. The FET also offers excellent thermal performance with its integrated D2PAK-7L package. This makes it the ideal choice for automotive, industrial, and consumer applications.

This FET is specifically designed to withstand high temperatures and harsh environments. It offers reliable performance in extreme temperatures and humid conditions. The device is well suited for applications such as high-side switches, battery management, DC-DC converters, and motor control. It is also well suited for laptop adapters and telecom applications.

The IPP65R600E6XKSA1 FET works on the principle of field-effect transistor. In a FET, current is controlled by an electric field. It has two terminals, a source and a drain, and a gate in between. The source and drain are connected to the external circuit. When the gate is given a proper voltage, an electric field is created between the source and drain, which forms a conductive path.

The gate voltage controls the current flowing through the source and drain. When the gate voltage is low, the current flows through the source and drain only if a sufficient voltage is given. At higher gate voltages, the current increases. The device is thus used as a switch in electronic circuits.

In the IPP65R600E6XKSA1 FET, its low on-resistance and low RDS(on) help reduce power consumption in the circuit. Its wide operating temperature range ensures reliable operation in extreme temperatures and harsh conditions. Its integrated D2PAK-7L package helps to achieve excellent thermal performance. The FET is ideal for applications that require reliable performance in harsh operating environments.

The IPP65R600E6XKSA1 FET is an ideal choice for device designers who are looking for a reliable, efficient, and long-lasting device for their designs. It offers superior performance in extreme temperatures and harsh environments. With its wide range of features, it is the perfect choice for automotive, industrial, and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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