| Allicdata Part #: | IPP65R600E6XKSA1-ND |
| Manufacturer Part#: |
IPP65R600E6XKSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 650V 7.3A TO220 |
| More Detail: | N-Channel 650V 7.3A (Tc) 63W (Tc) Through Hole PG-... |
| DataSheet: | IPP65R600E6XKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 3.5V @ 210µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | PG-TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 63W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 2.1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7.3A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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Transistors, also known as semiconductor devices, are electronic components used to control currents in electronic circuits. A field-effect transistor (FET) is a type of transistor used as an electronic switch in a variety of applications. The IPP65R600E6XKSA1 FET is one such device specifically designed to operate in extreme conditions. It is designed to operate in the most challenging applications with a wide range of temperatures, from -55 to 175 °C.
The IPP65R600E6XKSA1 is a single N-channel FET with low on-resistance and low RDS(on). It has a current rating of 28A, a voltage rating of 600V, and a P.S. max rating of 980W. The FET also offers excellent thermal performance with its integrated D2PAK-7L package. This makes it the ideal choice for automotive, industrial, and consumer applications.
This FET is specifically designed to withstand high temperatures and harsh environments. It offers reliable performance in extreme temperatures and humid conditions. The device is well suited for applications such as high-side switches, battery management, DC-DC converters, and motor control. It is also well suited for laptop adapters and telecom applications.
The IPP65R600E6XKSA1 FET works on the principle of field-effect transistor. In a FET, current is controlled by an electric field. It has two terminals, a source and a drain, and a gate in between. The source and drain are connected to the external circuit. When the gate is given a proper voltage, an electric field is created between the source and drain, which forms a conductive path.
The gate voltage controls the current flowing through the source and drain. When the gate voltage is low, the current flows through the source and drain only if a sufficient voltage is given. At higher gate voltages, the current increases. The device is thus used as a switch in electronic circuits.
In the IPP65R600E6XKSA1 FET, its low on-resistance and low RDS(on) help reduce power consumption in the circuit. Its wide operating temperature range ensures reliable operation in extreme temperatures and harsh conditions. Its integrated D2PAK-7L package helps to achieve excellent thermal performance. The FET is ideal for applications that require reliable performance in harsh operating environments.
The IPP65R600E6XKSA1 FET is an ideal choice for device designers who are looking for a reliable, efficient, and long-lasting device for their designs. It offers superior performance in extreme temperatures and harsh environments. With its wide range of features, it is the perfect choice for automotive, industrial, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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| IPP60R099CPXKSA1 | Infineon Tec... | 5.89 $ | 1000 | MOSFET N-CH 650V 31A TO-2... |
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| IPP60R600P6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.3A TO2... |
| IPP60R190C6XKSA1 | Infineon Tec... | -- | 1300 | MOSFET N-CH 600V 20.2A TO... |
| IPP60R190E6XKSA1 | Infineon Tec... | 2.34 $ | 1000 | MOSFET N-CH 600V 20.2A TO... |
| IPP65R110CFDXKSA1 | Infineon Tec... | 4.79 $ | 1000 | MOSFET N-CH 700V 31.2A TO... |
| IPP60R120P7XKSA1 | Infineon Tec... | 2.92 $ | 1000 | MOSFET N-CH 600V 26A TO22... |
| IPP60R750E6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 5.7A TO2... |
| IPP60R385CPXKSA1 | Infineon Tec... | 1.11 $ | 1000 | MOSFET N-CH 650V 9A TO-22... |
| IPP60R280E6XKSA1 | Infineon Tec... | 1.15 $ | 1000 | MOSFET N-CH 600V 13.8A TO... |
| IPP65R225C7XKSA1 | Infineon Tec... | 2.11 $ | 344 | MOSFET N-CH 650V 11A TO-2... |
| IPP65R600E6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 7.3A TO2... |
| IPP60R099CPAAKSA1 | Infineon Tec... | 3.7 $ | 1000 | MOSFET N-CH 600V 31A TO-2... |
| IPP60R600P7XKSA1 | Infineon Tec... | -- | 474 | MOSFET N-CH 650V 6A TO220... |
| IPP60R190P6XKSA1 | Infineon Tec... | 2.22 $ | 1000 | MOSFET N-CH 600V 20.2A TO... |
| IPP60R1K4C6XKSA1 | Infineon Tec... | 0.43 $ | 1000 | MOSFET N-CH 600V 3.2A TO2... |
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| IPP65R190CFDXKSA1 | Infineon Tec... | 2.48 $ | 1000 | MOSFET N-CH 650V 17.5A TO... |
| IPP65R600C6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 7.3A TO2... |
| IPP60R099C7XKSA1 | Infineon Tec... | 4.4 $ | 290 | MOSFET N-CH 600V 22A TO22... |
| IPP60R180C7XKSA1 | Infineon Tec... | 2.41 $ | 1000 | MOSFET N-CH 600V 13A TO22... |
| IPP60R280C6XKSA1 | Infineon Tec... | 1.15 $ | 1000 | MOSFET N-CH 600V 13.8A TO... |
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IPP65R600E6XKSA1 Datasheet/PDF