IPD50R3K0CEBTMA1 Allicdata Electronics
Allicdata Part #:

IPD50R3K0CEBTMA1TR-ND

Manufacturer Part#:

IPD50R3K0CEBTMA1

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 500V 1.7A PG-TO-252
More Detail: N-Channel 500V 1.7A (Tc) 18W (Tc) Surface Mount PG...
DataSheet: IPD50R3K0CEBTMA1 datasheetIPD50R3K0CEBTMA1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.11414
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 18W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 84pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V
Series: CoolMOS™ CE
Rds On (Max) @ Id, Vgs: 3 Ohm @ 400mA, 13V
Drive Voltage (Max Rds On, Min Rds On): 13V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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The IPD50R3K0CEBTMA1 is a type of Single N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is a type of semiconductor device consisting of four terminals - source, gate, drain and substrate. The IPD50R3K0CEBTMA1 has specific specifications making it suitable for a range of applications and working principles.

The IPD50R3K0CEBTMA1 has a drain-source on-state resistance of 3KΩ, a drain-source voltage of ± 30V with a Gate-Source voltage of up to 20V, and an output current capability of 8A. The breakdown voltage is 115V and it can handle an avalanche energy of 200mJ. It provides a fast switching speed and low on-resistance.

The IPD50R3K0CEBTMA1 is commonly used in applications such as general-purpose switching, DC-DC converters, AC and DC motor control, and power management. The transistor is suitable for medium power circuits, due to its low on-resistance, low operating temperature and high efficiency. It is also suitable for low power circuits due to its maximum gate-source voltage of 20V and maximum drain-source voltage of ± 30V.

As with all MOSFETs, the IPD50R3K0CEBTMA1 works on the principle of a "field effect". It is a unipolar device that consists of an insulated gate and a thin N-type layer of semiconductor (the channel) separating the drain and source electrodes. When a voltage is applied to the gate, an electric field is created over the channel, which modulates the conductivity of the channel and convert input signals into output signals.

The IPD50R3K0CEBTMA1 has been designed for low-power applications, when it is used with a low gate-source voltage and current, it can allow for the flow of current in only one direction, with very low on-state resistance and limited power losses. This makes the IPD50R3K0CEBTMA1 suitable for switching and current control applications.

The IPD50R3K0CEBTMA1 is also well suited to audio amplifiers, pulse handling and motor control systems, due to its excellent performance in terms of speed and power. The high quality of the IPD50R3K0CEBTMA1 ensures efficient output and minimal sound distortion when used in audio applications.

Overall, the IPD50R3K0CEBTMA1 is an ideal choice for a variety of applications with its fast switching speed, low on-resistance and high efficiency. From general-purpose switching to motor control and audio amplifying, the IPD50R3K0CEBTMA1 is an excellent device that offers users a reliable and efficient performance.

The specific data is subject to PDF, and the above content is for reference

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