
Allicdata Part #: | IPD50R3K0CEBTMA1TR-ND |
Manufacturer Part#: |
IPD50R3K0CEBTMA1 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 500V 1.7A PG-TO-252 |
More Detail: | N-Channel 500V 1.7A (Tc) 18W (Tc) Surface Mount PG... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.11414 |
Vgs(th) (Max) @ Id: | 3.5V @ 30µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 18W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 84pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 4.3nC @ 10V |
Series: | CoolMOS™ CE |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 400mA, 13V |
Drive Voltage (Max Rds On, Min Rds On): | 13V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IPD50R3K0CEBTMA1 is a type of Single N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is a type of semiconductor device consisting of four terminals - source, gate, drain and substrate. The IPD50R3K0CEBTMA1 has specific specifications making it suitable for a range of applications and working principles.
The IPD50R3K0CEBTMA1 has a drain-source on-state resistance of 3KΩ, a drain-source voltage of ± 30V with a Gate-Source voltage of up to 20V, and an output current capability of 8A. The breakdown voltage is 115V and it can handle an avalanche energy of 200mJ. It provides a fast switching speed and low on-resistance.
The IPD50R3K0CEBTMA1 is commonly used in applications such as general-purpose switching, DC-DC converters, AC and DC motor control, and power management. The transistor is suitable for medium power circuits, due to its low on-resistance, low operating temperature and high efficiency. It is also suitable for low power circuits due to its maximum gate-source voltage of 20V and maximum drain-source voltage of ± 30V.
As with all MOSFETs, the IPD50R3K0CEBTMA1 works on the principle of a "field effect". It is a unipolar device that consists of an insulated gate and a thin N-type layer of semiconductor (the channel) separating the drain and source electrodes. When a voltage is applied to the gate, an electric field is created over the channel, which modulates the conductivity of the channel and convert input signals into output signals.
The IPD50R3K0CEBTMA1 has been designed for low-power applications, when it is used with a low gate-source voltage and current, it can allow for the flow of current in only one direction, with very low on-state resistance and limited power losses. This makes the IPD50R3K0CEBTMA1 suitable for switching and current control applications.
The IPD50R3K0CEBTMA1 is also well suited to audio amplifiers, pulse handling and motor control systems, due to its excellent performance in terms of speed and power. The high quality of the IPD50R3K0CEBTMA1 ensures efficient output and minimal sound distortion when used in audio applications.
Overall, the IPD50R3K0CEBTMA1 is an ideal choice for a variety of applications with its fast switching speed, low on-resistance and high efficiency. From general-purpose switching to motor control and audio amplifying, the IPD50R3K0CEBTMA1 is an excellent device that offers users a reliable and efficient performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IPD50N10S3L16ATMA1 | Infineon Tec... | -- | 1072 | MOSFET N-CH 100V 50A TO25... |
IPD50R650CEATMA1 | Infineon Tec... | 0.26 $ | 1000 | MOSFET N CH 500V 6.1A PG-... |
IPD50R650CEAUMA1 | Infineon Tec... | 0.23 $ | 1000 | CONSUMER |
IPD50R399CPBTMA1 | Infineon Tec... | 0.0 $ | 1000 | LOW POWER_LEGACY |
IPD50R1K4CEAUMA1 | Infineon Tec... | 0.14 $ | 1000 | MOSFET N-CH 500V 3.1A PG-... |
IPD50P04P413ATMA1 | Infineon Tec... | -- | 2500 | MOSFET P-CH 40V 50A TO252... |
IPD5012-760 | Inventus Pow... | 15.52 $ | 345 | 50 WATT DESKTOP POWER SUP... |
IPD50R950CEAUMA1 | Infineon Tec... | 0.16 $ | 1000 | CONSUMER |
IPD50N08S413ATMA1 | Infineon Tec... | 0.34 $ | 1000 | MOSFET N-CH TO252-3N-Chan... |
IPD50N04S4L08ATMA1 | Infineon Tec... | -- | 2500 | MOSFET N-CH 40V 50A TO252... |
IPD5N03LAG | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 50A TO252... |
IPD50N03S4L06ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 50A TO252... |
IPD50R520CPATMA1 | Infineon Tec... | -- | 1000 | LOW POWER_LEGACY |
IPD50R950CEATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.3A PG-... |
IPD50R3K0CEBTMA1 | Infineon Tec... | 0.13 $ | 1000 | MOSFET N-CH 500V 1.7A PG-... |
IPD50N06S214ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 50A TO252... |
IPD50N04S410ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 50A TO252... |
IPD50R800CEAUMA1 | Infineon Tec... | 0.2 $ | 1000 | CONSUMER |
IPD50R399CPATMA1 | Infineon Tec... | 0.64 $ | 1000 | LOW POWER_LEGACY |
IPD5015-760 | Inventus Pow... | 15.44 $ | 1000 | 50 WATT DESKTOP POWER SUP... |
IPD50N06S4L12ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 50A TO252... |
IPD50R500CEAUMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 550V 7.6A TO2... |
IPD50R380CEBTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N CH 500V 9.9A PG-... |
IPD50N03S207ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 50A TO252... |
IPD50N03S2L06ATMA1 | Infineon Tec... | 0.39 $ | 1000 | MOSFET N-CH 30V 50A TO252... |
IPD50N06S2L13ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 50A TO252... |
IPD50R280CEATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 500V 13A PG-T... |
IPD50N06S214ATMA2 | Infineon Tec... | 0.43 $ | 1000 | MOSFET N-CH 55V 50A TO252... |
IPD50P04P4L11ATMA1 | Infineon Tec... | -- | 15000 | MOSFET P-CH 40V 50A TO252... |
IPD5024-760 | Inventus Pow... | 15.05 $ | 128 | 50 WATT DESKTOP POWER SUP... |
IPD50R280CEAUMA1 | Infineon Tec... | 1.29 $ | 364 | MOSFET N-CH 550V 18.1A TO... |
IPD50N06S4L08ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 50A TO252... |
IPD50R520CP | Infineon Tec... | -- | 1000 | MOSFET N-CH 550V 7.1A TO-... |
IPD50R2K0CEBTMA1 | Infineon Tec... | 0.13 $ | 1000 | CONSUMER |
IPD50N04S308ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 50A TO252... |
IPD50R280CEBTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 500V 13A PG-T... |
IPD50P03P4L11ATMA1 | Infineon Tec... | -- | 1000 | MOSFET P-CH 30V 50A TO252... |
IPD50N06S2L13ATMA2 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 50A TO252... |
IPD50N04S309ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 50A TO252... |
IPD50R950CEBTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.3A PG-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
