Allicdata Part #: | 497-15957-5-ND |
Manufacturer Part#: |
STFI15N60M2-EP |
Price: | $ 1.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 11A I2PAKFP |
More Detail: | N-Channel 600V 11A (Tc) 25W (Tc) Through Hole I2PA... |
DataSheet: | STFI15N60M2-EP Datasheet/PDF |
Quantity: | 1496 |
1 +: | $ 1.64430 |
10 +: | $ 1.48302 |
100 +: | $ 1.19165 |
500 +: | $ 0.92682 |
1000 +: | $ 0.76794 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Full Pack, I²Pak |
Supplier Device Package: | I2PAKFP (TO-281) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 590pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | MDmesh™ M2 |
Rds On (Max) @ Id, Vgs: | 378 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
STFI15N60M2-EP transistors are used for power semiconductor applications. They are a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), and they are designed to switch large amounts of power quickly and efficiently with minimal losses. This makes them perfect for applications such as motor control, inverters, switching power supplies, and switch mode power converters.
STFI15N60M2-EP transistors are also known as power MOSFETs as they are designed to handle high voltage and current levels. They are a type of insulated gate bipolar transistor (IGBTs) that consists of two isolated electrical transistors and two isolated electrical gates. The transistors are connected to each other in parallel and separated by an insulating layer of dielectric material. The gates are then used to control the flow of current between the transistors.
The working principle of an STFI15N60M2-EP transistor is fairly straightforward. When a voltage is applied to the gate, the dielectric layer between the transistors is altered, allowing current to flow between them. The positive voltage on the gate acts as an insulator, allowing only the desired current flow between the two transistors. This allows the transistor to be used as a switch to quickly and efficiently turn on and off power to a variety of different devices.
STFI15N60M2-EP transistors are an ideal choice for applications such as motor control and variable speed drives because they can switch power quickly and efficiently with low losses. They are also used in applications such as switching power supplies, rectifiers, and boost converters because of their high voltage and switching capabilities.
Because of their ability to switch quickly and efficiently, STFI15N60M2-EP transistors are becoming increasingly popular for power applications. They are generally more expensive than other types of power transistors, but their high performance and low losses make them an attractive choice for a wide range of power-related applications.
STFI15N60M2-EP transistors are a reliable and efficient option for many power-related applications, and they offer several advantages over other types of transistors. They are efficient, reliable, and cost-effective, making them an ideal choice for many power applications.
The specific data is subject to PDF, and the above content is for reference
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