
Allicdata Part #: | 497-12270-2-ND |
Manufacturer Part#: |
STL16N65M5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V HV POWERFLAT |
More Detail: | N-Channel 650V 12A (Tc) 3W (Ta), 90W (Tc) Surface ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (8x8) HV |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 299 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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STL16N65M5 is a 65 V N-channel MOSFET (metal oxide semiconductor field effect transistor) which has a maximum drain-source voltage of 65 V and a drain-source on-state resistance of 6.9 mohms. It is a single-channel MOSFET that is used in power conversion and circuit protection applications. It offers significant system performance advancements compared to existing power systems.
This MOSFET is manufactured using innovative STriped Linear technology which reduces the specific on-resistance and ensures superior thermal resistance performance. The transistor also features a low input capacitance and ultra-low gate charge, making it ideal for low-frequency, low-voltage applications.
The MOSFET\'s maximum drain source voltage of 65 V and its threshold voltage of 2.4 V ensure the device\'s safe performance. The maximum drain-source off-state current is low enough to protect the transistor from over-voltage conditions. The low input capacitance and the ultra-low gate charge help reduce total power losses in applications.
The device is designed to be quite robust and reliable, even in harsh environments. It offers a high maximum operating temperature of up to 260°C. The MOSFET features a high breakdown voltage and an enhanced current handling capability at hot temperatures. It also includes an integrated thermal shutdown for protection against over-temperature conditions.
When it comes to working principle, a MOSFET works by controlling the flow of electric current between source and drain. It does this by modulating the resistance of a channel formed in the semiconductor material between source and drain. When an electric field is applied to the gate, it creates an electric charge on the gate and the field will modulate the resistance of the channel. Therefore, the current can be controlled by modulating the electric field.
The STL16N65M5 is ideal for applications that require high switching speeds, such as high-efficiency DC/DC converters and automotive light-emitting diode (LED) solutions. Additionally, it is an important component in the power supply circuit of computers, communications devices, and consumer electronics. Furthermore, it is also an ideal choice for automotive vehicle charging circuits. The transistor can be used in advanced circuit protection applications, such as motor driver circuits, as it provides robustness and reliability.
The STL16N65M5 is a powerful and reliable MOSFET that is suitable for a wide range of applications. It offers low-resistance, low gate charge, and a high-temperature operating range, which makes it an ideal choice for switching and controlling power in high-voltage applications. The integrated thermal shutdown provides additional protection against over-temperature conditions. With its high performance, robustness and appropriate security features, the STL16N65M5 is an excellent choice for any circuit protection or power conversion application.
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