Allicdata Part #: | 497-18093-ND |
Manufacturer Part#: |
STP8N120K5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 1200V 8A TO-220 |
More Detail: | N-Channel 1200V 6A (Tc) 130W (Tc) Through Hole TO-... |
DataSheet: | STP8N120K5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 505pF @ 100V |
Vgs (Max): | -- |
Gate Charge (Qg) (Max) @ Vgs: | 13.7nC @ 10V |
Series: | MDmesh™ K5 |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STP8N120K5 Application Field and Working Principle
STP8N120K5 is a type of single pulse width modulation (PWM) MOSFET. It is capable of controlling the switching of loads at higher voltages and currents in power electronic applications. The STP8N120K5 has a maximum drain source voltage of 800V, drain current of 16A and a continuous current rating of 15A. It is most commonly used in industrial applications such as motor control, power supplies, converters, and drive systems.
Features of STP8N120K5
- Low gate charge provides significant improvement in efficiency and gate drive characteristics of the device
- Very low on-resistance
- Improved dV/dt capability
- High switching frequency
- Low thermal resistance
- No overshoot
- Operating temperature range of -55 to +150 ?C
Working Principle of STP8N120K5
The STP8N120K5 is a type of MOSFET with a gate, drain and source. All of them are connected to an external circuit that provides electrical energy to the STP8N120K5. The gate is the terminal used to control the current flow through the MOSFET, by applying a voltage on the gate. The voltage applied to the gate controls the current which passes through the MOSFET, as the drain and source remain the same. Thus, one can limit the amount of current passing through the MOSFET by controlling the voltage applied on the gate, using the PWM.
When the voltage applied on the gate is low, the MOSFET acts like an open switch and the current will not pass through the device. When the voltage is high, the current passes through the MOSFET and it acts like a closed switch. Thus, the STP8N120K5 is used to control the switching of electrical loads, as the MOSFET will be constantly switching between the “ON” and “OFF” state, depending on the voltage applied on the gate.
The STP8N120K5 can be used in any application where the switching of high current is required, as it is capable of controlling higher voltages and currents than other types of transistors. The MOSFET has low on-resistance, low gate charge and improved dV/dt capabilities, which makes it suitable for use in applications such as motor control, power supplies, converters, and drive systems. The STP8N120K5 is also capable of operating at high switching frequencies and can handle a wide range of temperatures.
Conclusion
The STP8N120K5 is a unique type of pulse width modulation (PWM) MOSFET, capable of controlling the switching of electrical loads at higher voltages and currents in power electronic applications. The device has a very low on-resistance, low gate charge, improved dV/dt capabilities, and can operate at high switching frequencies, making it suitable for use in applications such as motor control, power supplies, converters, and drive systems. It can also handle a wide range of temperatures, from -55 to +150 ?C. The STP8N120K5 is a technology that has revolutionized the power electronics industry, and is sure to become a mainstay for years to come.
The specific data is subject to PDF, and the above content is for reference
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