IPD50R950CEATMA1

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The IPD50R950CEATMA1 is a powerful FET that is able to provide superior performance in numerous applications. This single, MOSFET has a wide range of uses and can be found in such devices as automotive systems, industrial equipment, robotics, and communications equipment.

The IPD50R950CEATMA1 can be used in high voltage situations, up to 50 volts. Additionally, it has an impressive power rating of up to 1.2 watts and has a maximum continuous drain source current of 1.5A. These characteristics make it an ideal choice for many power solutions.

The IPD50R950CEATMA1 is manufactured in a variety of packages. These include a plastic SOT223-3, SOT403-3, SOT553-3, and SOT753-2. Additionally, a variety of lead terminations are available to suit any applications, such as the sot343, sot553, and sot753.

The IPD50R950CEATMA1 uses a standard MOSFET construction and operating principle. The device uses an insulated gate to control the flow of current through a n-type channel. It also has a self-aligned gate, which provides a low resistance between the source and drain. This helps reduce power losses, enabling it to operate even when switching large currents.

The IPD50R950CEATMA1 is versatile enough to be used in many applications. Its versatility allows it to be used in applications such as switching circuits, regulating input and output, amplifying, and voltage level shifting. It can also be used in DC-DC converters, audio amplifiers, LED drivers, and general-purpose switches.

The IPD50R950CEATMA1 is one of the most popular MOSFETs on the market today. It features a wide range of sophisticated features, making it an ideal choice for a variety of designs. With its robust performance and reliability, the IPD50R950CEATMA1 can be used to provide reliable and efficient power solutions.

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