| Allicdata Part #: | 497-13533-ND |
| Manufacturer Part#: |
STFI20N65M5 |
| Price: | $ 3.24 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N CH 650V 18A I2PAKFP |
| More Detail: | N-Channel 650V 18A (Tc) 130W (Tc) Through Hole I2P... |
| DataSheet: |  STFI20N65M5 Datasheet/PDF |
| Quantity: | 1465 |
| 1 +: | $ 2.94210 |
| 10 +: | $ 2.62647 |
| 100 +: | $ 2.15359 |
| 500 +: | $ 1.74388 |
| 1000 +: | $ 1.47073 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-262-3 Full Pack, I²Pak |
| Supplier Device Package: | I2PAKFP (TO-281) |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 130W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1345pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
| Series: | MDmesh™ V |
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 9A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The STFI20N65M5 is a type of transistors, specifically a Field Effect Transistor (FET). These transistors act as either a source or a drain to control the flow of current between two terminals. FETs are widely used in electronics, allowing for the control of high currents and voltages with low overall power consumption. Generally speaking, FETs are more efficient than other types of transistors for switching applications, which is why they are so commonly used in digital logic circuits.This specific FET is a metal oxide semiconductor FET (MOSFET). This type of FET operates differently than other FETs, primarily due to its reliance on the gate-to-source voltage to control the flow of current. The STFI20N65M5 specifically is a single MOSFET, meaning it consists of only a single FET element that is used for both the source and the drain. This makes single MOSFETs easier to use and simpler to integrate into a circuit but can limit their performance.The STFI20N65M5 can be used in a variety of applications including power management and power conversion. It can be used as a switch to turn on or off a certain circuit, as well as providing protection from over-current or short-circuiting. The STFI20N 65M5’s low output capacitance can also make it useful as an electronic speed controller or as an amplifier.The STFI20N65M5 also has a wide range of operating and switching speeds, making it suitable for a variety of applications. Its maximum power dissipation of 770 mW makes it suitable for driving loads up to 3A, and its static drain-source on state resistance of 0.8R makes it suitable for high efficiency and low power applications.Given its wide range of application and its performance characteristics, the STFI20N65M5 is a great choice for a variety of applications. It is relatively small, easy to integrate into a circuit and can operate at high speeds and low power levels.
The specific data is subject to PDF, and the above content is for reference
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