Current limit linear stabilizer - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IRC730PBF-ND	IRC730PBF	Vishay Siliconix	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 74W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	1000 Order	--
568-9627-2-ND	BUK7105-40AIE,1 18	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 127nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 272W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-426 Package / Case: TO-263-5, DPak (4 Leads + Tab), TO-263BB	1000 Order	1+: $0
IRC640PBF-ND	IRC640PBF	Vishay Siliconix	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	1000 Order	1+: $0
IRC840PBF-ND	IRC840PBF	Vishay Siliconix	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	1000 Order	--
BUK7C08-55AITE, 118-ND	BUK7C08-55AITE, 118	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 272W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-7, DPak (6 Leads + Tab), TO-263CB	1000 Order	1+: $0
NILMS4501NR2GOS TR-ND	NILMS4501NR2G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V FET Feature: Current Sensing Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-PLLP Package / Case: 4-DFN	1000 Order	1+: $0
IRC540PBF-ND	IRC540PBF	Vishay Siliconix	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	1000 Order	1+: $0
1727-7176-2-ND	BUK7C10-75AITE, 118	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 272W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-7, DPak (6 Leads + Tab), TO-263CB	1000 Order	1+: $0
IRCZ34PBF-ND	IRCZ34PBF	Vishay Siliconix	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 88W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	1000 Order	--
IRC740PBF-ND	IRC740PBF	Vishay Siliconix	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	1000 Order	1+: $0
IRCZ44PBF-ND	IRCZ44PBF	Vishay Siliconix	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	1000 Order	1+: $0
1727-7175-2-ND	BUK7C06-40AITE, 118	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 272W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-7, DPak (6 Leads + Tab), TO-263CB	1000 Order	1+: $0
IRC830PBF-ND	IRC830PBF	Vishay Siliconix	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 74W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	1000 Order	--
BUK7107-55AIE,1 18-ND	BUK7107-55AIE,1 18	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 272W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-426 Package / Case: TO-263-5, DPak (4 Leads + Tab), TO-263BB	1000 Order	1+: $0
1727-7225-ND	BUK7909-75AIE,1 27	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 272W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	3243 Order	1+: $1.6758 10+: $1.5152 100+: $1.2174 500+: $0.9469 1000+: $0.7845
1727-7230-ND	BUK7905-40AIE,1 27	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 127nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 272W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	3881 Order	1+: $1.6758 10+: $1.5152 100+: $1.2174 500+: $0.9469 1000+: $0.7845
IRCZ24PBF-ND	IRCZ24PBF	Vishay Siliconix	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	1000 Order	1+: $0
1727-7224-ND	BUK7908-40AIE,1 27	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tube Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 221W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	4206 Order	1+: $1.7388 50+: $1.4015 100+: $1.2614 500+: $0.9811 1000+: $0.8129
TK50E06K3(S1SS- Q)-ND	TK50E06K3(S1SS- Q)	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tube Part Status: Active Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
PH7630DLX-ND	PH7630DLX	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Mounting Type: Surface Mount	1000 Order	1+: $0
AOTF8N65_002-ND	AOTF8N65_002	Alpha & Omega Semiconductor Inc.	View more Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide)	1000 Order	1+: $0
NTMFD4951NFT3G- ND	NTMFD4951NFT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) Package / Case: 8-PowerTDFN	1000 Order	5000+: $1.0145
EFC4619R-A-TR-N D	EFC4619R-A-TR	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: EFCP1616-4CE-022 Package / Case: 4-XFBGA	1000 Order	5000+: $0.1761
MKE38P600LB-TRR -ND	MKE38P600LB-TRR	IXYS	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Mounting Type: Surface Mount Supplier Device Package: ISOPLUS-SMPD.B Package / Case: 9-SMD Module	1000 Order	200+: $22.8712
AON7406L-ND	AON7406L	Alpha & Omega Semiconductor Inc.	View more Part Status: Last Time Buy	1000 Order	--
ATP404-H-TL-H-N D	ATP404-H-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	1000 Order	3000+: $0.5745
RJK5034DPP-E0#T 2-ND	RJK5034DPP-E0#T 2	Renesas Electronics America	View more Packaging: Tube Part Status: Discontinued at Digi-Key Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
IXTM11P50-ND	IXTM11P50	IXYS	View more Part Status: Last Time Buy	1000 Order	1+: $0
2SK536-MTK-TB-E -ND	2SK536-MTK-TB-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 12V Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CP Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	3000+: $0.2101
IPP21N03LG-ND	IPP21N03L G	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
NTTFS4C65NTAG-N D	NTTFS4C65NTAG	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	1000 Order	1500+: $0.3043
IPS20N03LG-ND	IPS20N03L G	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 30A (Ta) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	1000 Order	1+: $0
IXFD80N20Q-8XQ- ND	IXFD80N20Q-8XQ	IXYS	View more Series: HiPerFET Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Operating Temperature: 150C (TJ) Supplier Device Package: Die Package / Case: Die	1000 Order	1+: $0
JANSF2N7383-ND	JANSF2N7383	Microsemi Corporation	View more Part Status: Obsolete	1000 Order	1+: $0
497-13950-5-ND	STFI13N60M2	STMicroelectronics	View more Series: MDmesh II Plus Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	454 Order	1+: $2.79
NTTFS4C50NTAG-N D	NTTFS4C50NTAG	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	1000 Order	1500+: $0.3478
TLC530FTU-ND	TLC530FTU	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 330V Current - Continuous Drain (Id) @ 25C: 7A (Ta) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
EFC4621R-A-TR-N D	EFC4621R-A-TR	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: EFCP1818-4CE-22 Package / Case: 4-XFBGA	1000 Order	1+: $0
IXFM1766-ND	IXFM1766	IXYS	View more Part Status: Last Time Buy	1000 Order	1+: $0
NTTFS4C56NTAG-N D	NTTFS4C56NTAG	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	1000 Order	1500+: $0.3635

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