STFI13N60M2

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STFI13N60M2 is a high voltage, single N-channel power MOSFET designed for switching applications. This is a vertical double-diffused metal-oxide-semiconductor field-effect transistor (VMOS) with a high-performance substrate and double-metal gate construction. It is intended for use in a wide range of applications such as automotive, consumer, commercial, and industrial applications.

The single channel of the STFI13N60M2 MOSFET provides a low on-resistance of 3.0mΩ @ VGS = 10V and maximum operating temperature of 175°C. This MOSFET also features integrated capacitors, providing reliable performance in high current switching applications. The integrated gate charge reduces power losses by reducing switching losses, and the low gate charge (Qg) reduces gate conduction losses. Additionally, the fast switching and low gate charge reduce device heating and power losses.

The STFI13N60M2 MOSFET can handle high voltages up to 700V and is capable of operating at high frequencies up to 1MHz. It has a maximum continuous drain current of 115A and peak on resistance of 1.0mΩ @ VGS = 8V. The tight parameter distribution of the STFI13N60M2 ensures robust and reliable performance, even in the most demanding of switching applications.

The STFI13N60M2 is widely used in the industrial, automotive and consumer electronics field. In the industrial sector, it is typically used for controlling DC motors, pumps, valves and other industrial equipment, while in automotive and consumer electronics it is used for applications such as switching, power supplies, and power converters.

The working principle of the STFI13N60M2 MOSFET is based on the principle of electrical charge movements between two terminals. A MOSFET is composed of several layers of metal and semiconductor materials. When a voltage is applied across one terminal (drain) and the other (source), the voltage induces an electrical charge to flow from the source to the drain.

At the heart of the MOSFET is the metal-oxide-semiconductor (MOS) layer, which acts as a gate between the source and drain. By applying a voltage to the gate, it can be turned on and off. When the gate is off, the flow of charge between the source and drain is prohibited. When the gate is on, the charge can flow freely from the source to the drain.

The gate voltage is controlled by the gate driver, which cuts off the connection between the gate and drain when it decreases the voltage and allows the charge to flow when it increases the voltage. This mechanism allows for fast switching and a small power loss, resulting in a high efficiency application of the MOSFET.

In addition to its high voltage, high current and fast switching characteristics, the STFI13N60M2 MOSFET also offers a high output current and high power capabilities, making it ideal for high power switching applications. It is also a suitable option for low power designs, where it can be used to provide optimal power efficiency.

The STFI13N60M2 MOSFET is the ideal choice for applications requiring high voltage, fast switching and low power losses. Its integrated capacitors and double-metal gate construction make it highly reliable and suitable for a wide range of applications, from industrial, automotive and consumer electronics.

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