BUK7C10-75AITE,118

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The BUK7C10-75AITE ,118 is a junction field effect transistor (JFET) designed with a negative-channel depletion mode feature. It is also referred to as an Enhancement-Mode FET (EFET), as it is designed to increase current flow or impedance through the device. This device operates as a voltage-controlled device with a drain to source impedance less than the source to gate impedance.

The BUK7C10-75AITE,118 has a gate current of 75mA, making it suitable for use in high-current applications. The device is also designed with a low junction capacitance, making it suitable for high frequency operation.

The device is useful for various applications, such as signal amplifiers, high-power switching, amplifiers, and temperature sensors. The device is also used as a high-performance transistor in complex power converters. It is also suitable for negative voltage regulation, as it can handle high voltages and current. In addition, the device is applicable in wide range of AC and DC applications.

The basic working principle of the BUK7C10-75AITE,118 is a two-level operation. First, the gate voltage is set to reverse-bias the channel, reducing or eliminating current flow through it. In this region, the device is in saturation and can be used to provide a high-resistance switch or amplifier. The voltage of the gate is then increased, which neutralizes the connection of the gate to the channel, allowing current flow. The device is then in its linear region, which is useful for providing adjustable resistance or current gain.

The advantages of the BUK7C10-75AITE,118 include its high switching speed, low junction capacitance, low gate leakage current, as well as its high current-handling capability. Additionally, its low noise, low distortion, and low thermal emf result in high-acoustic and high-performance operation.

In conclusion, the BUK7C10-75AITE,118 is a junction field-effect transistor designed with a negative-channel depletion mode feature. It is ideal for use in high-current and high-frequency applications, such as signal amplifiers, temperature sensors, high-power switching and amplifiers, and negative voltage regulations. The device is also beneficial due to its high switching speed, low junction capacitance, low gate leakage current, and its high current-handling capability.

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