BUK7909-75AIE,127

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The BUK7909-75AIE,127 is a single N-channel field-effect transistor (FET) used for amplifying or switching electronic signals and current. When used as a switching device, it allows the transistor to operate without a bias current and maintain a high level of isolation. This makes it ideal for applications such as a high-speed switching circuit. The BUK7909-75AIE,127 is an ideal choice for applications that require fast switching, low power consumption and high isolation.

A field-effect transistor (FET) is a three-terminal semiconductor device with a channel between the drain (source) and the gate (gate terminal) controlled by the voltage applied to the gate. This type of device is also known as insulated-gate bipolar transistor (IGBT). An FET is able to amplify or switch a signal effectively because its channel is modulated by the voltage or current applied to the gate. The BUK7909-75AIE,127 operates using a N-type MOSFET technology and is ideal for applications where high switching speed, low power consumption, and high isolation are important.

The BUK7909-75AIE,127 has an integrated gate-drain capacitance of 40pF as well as a maximum drain-source voltage of 75V. The maximum working temperature is 125°C; therefore, it can be used in a variety of environments and applications. As a single N-channel FET, the BUK7909-75AIE,127 excels at high-speed switching. This makes it suitable for a variety of applications such as switching power supply circuits, computer power supplies, clock or timing circuits, oscillator circuits, and high-power switching.

The BUK7909-75AIE,127 features an insulated gate-drain structure, which provides isolation between the gate and drain and helps prevent static electricity and other interference from affecting circuit performance. The device also offers a low on-resistance (RDSon) of 7.5mΩ, providing both high-speed switching and low power consumption.

The working principle of the BUK7909-75AIE,127 is based on the movement of electrons due to a voltage applied to the gate terminal. When voltage is applied to the gate terminal, the electrons in the semiconductor channel move, creating a circuit and allowing current to flow between the drain and source. The current is determined by the gate-to-source voltage (VGS) and the gate-to-drain voltage (VDS). The gate-source voltage (VGS) and the drain-source voltage (VDS) must be below the maximum ratings of the device in order for it to function properly. The BUK7909-75AIE,127 is able to switch and control high-speed signals due to its low on-resistance (RDSon) and high off-state leakage current.

In conclusion, the BUK7909-75AIE,127 is a single N-channel field-effect transistor designed for fast switching applications with low power consumption. It features an integrated gate-drain capacitance of 40pF, a maximum drain-source voltage of 75V, and a maximum operating temperature of 125°C. The device has an insulated gate-drain structure that prevents static electricity and other interference from affecting the circuit\'s performance. It also offers a low on-resistance (RDSon) of 7.5mΩ, providing both high-speed switching and low power consumption. The working principle of the BUK7909-75AIE,127 is based on the movement of electrons due to a voltage applied to the gate terminal, allowing current to flow between the drain and source. The device is suitable for a variety of applications such as switching power supply circuits, computer power supplies, clock or timing circuits, oscillator circuits, and high-power switching.

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