| Allicdata Part #: | NTTFS4C56NTAG-ND |
| Manufacturer Part#: |
NTTFS4C56NTAG |
| Price: | $ 0.41 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 65A U8FL |
| More Detail: | MOSFET N-CH 30V 65A U8FL |
| DataSheet: |  NTTFS4C56NTAG Datasheet/PDF |
| Quantity: | 1000 |
| 1500 +: | $ 0.36352 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | -- |
| Technology: | -- |
| Current - Continuous Drain (Id) @ 25°C: | -- |
| Rds On (Max) @ Id, Vgs: | -- |
| Vgs(th) (Max) @ Id: | -- |
| FET Feature: | -- |
| Power Dissipation (Max): | -- |
| Operating Temperature: | -- |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-WDFN (3.3x3.3) |
| Package / Case: | 8-PowerWDFN |
Description
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NTTFS4C56NTAG is a type of Field Effect Transistor (FET) that has just one source, one drain and one gate electrode. It is often referred to as an “enhancement mode” MOSFET, because the way it operates is similar to the way a field effect transistor works – by controlling the flow of electric current between two terminals (source and drain) through an applied voltage. The NTTFS4C56NTAG is not only a popular choice for new applications, but also for legacy applications due to its favourable features.The NTTFS4C56NTAG has a variety of applications, spanning across many different industries and sectors. It can be used in high power switching applications, such as in power supplies and converters. It can also be used in low power switching applications, such as in automotive, industrial and medical applications. Additionally, the NTTFS4C56NTAG can be utilized in signal processing, such as in high-speed data transmission, amplification and noise reduction.The NTTFS4C56NTAG is a particularly appealing choice for new applications due to its unique features. These features include its high drain-source breakdown voltage (up to 39V), low on-resistance (as low as 5 mOhm), and its robustness to ESD and latch-up. Its on-resistance is very low compared to other similar FETs and is a strong point in favor of its use in applications where power efficiency is a key factor. Its highest on-resistance is still relatively low, ensuring that it does not strain the system in which it operates. Its robustness to ESD and latch-up is a major advantage, as these parameters are very sensitive in FETs and can easily cause device failure when not properly considered.The NTTFS4C56NTAG is an enhancement mode FET, operating based on the principle of drain-source voltage control. In simple terms, this means that the device’s on-state current (flow) is dependent on the voltage applied to its drain-source terminals. When a voltage is applied between the drain and source of the device, the gate-source voltage will rise; with this, the on-state resistance of the FET decreases and the on-state current increases. A decrease in the gate-source voltage will cause the on-state resistance to increase, thus decreasing the current.In applications, the NTTFS4C56NTAG is used primarily as an active switch, being utilized in a wide variety of systems and circuits for the purposes of power switching, signal processing, and noise reduction. As an active switch, its on-state current flow is usually regulated by signals, allowing for precise control and accurate behavior in a given application.Overall, the NTTFS4C56NTAG is an ideal choice for both legacy and new applications. Its various features, such as its high drain-source breakdown voltage, low on-resistance, and robustness are a strong advantage and help make the device an ideal choice for applications such as high power switching, low-power switching and signal processing. As an enhancement mode device, it operates based on the principle of drain-source voltage control, allowing for precise and accurate control in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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