Allicdata Part #: | BUK7107-55AIE,118-ND |
Manufacturer Part#: |
BUK7107-55AIE,118 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 55V 75A D2PAK |
More Detail: | N-Channel 55V 75A (Tc) 272W (Tc) Surface Mount SOT... |
DataSheet: | BUK7107-55AIE,118 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
Supplier Device Package: | SOT-426 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 272W (Tc) |
FET Feature: | Current Sensing |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 116nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BUK7107-55AIE,118 is a type of transistor, more particularly a field-effect transistor (FETs). Specifically, it is a single-ended FET, meaning it can carry a single input signal from source to drain, and its output is a single-ended signal at the drain. The BUK7107-55AIE,118 is designed for high-frequency applications up to the 100 GHz range, and its characteristics are optimized for use in these frequencies.
When viewed under a microscope, we can see that FET transistors have three distinct regions. The first is the source, also called the gate. The source is where current enters the device, and it is separated from the drain by an insulator, usually silicon dioxide. The second region is the drain, which is where current exits the device. Finally, the third region is the channel, which is the main control element in the device. It is through this channel that the electric current flows.
The working principle of the BUK7107-55AIE,118 is that it works by allowing current to flow between its source and drain when an electric field is applied. When a positive potential is applied to the gate, it creates an electric field that induces a current to flow through the channel, which then runs between the source and the drain. By varying the voltage on the gate, it is possible to modulate the current that runs through the channel and, in turn, the output at the drain.
The BUK7107-55AIE,118 has a variety of uses, ranging from high-power RF switch applications to reference designs and amplifiers. It can also be used in high-frequency circuits such as as frequency dividers, mixers, and mixers-detectors. It is also well suited for applications that require high-frequency signal generation, such as for radar systems, satellite communication systems, and cellular phones.
In conclusion, the BUK7107-55AIE,118 is a type of single-ended FET transistor that is optimized for use in high-frequency applications up to the 100 GHz range, and is suitable for use in a wide range of applications such as frequency dividers, mixers, and mixers-detectors. The device works by allowing current to flow between its source and drain, when an electric field is applied, modulated by the bias voltage on its gate.
The specific data is subject to PDF, and the above content is for reference
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