| Allicdata Part #: | BUK7C08-55AITE,118-ND |
| Manufacturer Part#: |
BUK7C08-55AITE,118 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 55V 75A D2PAK |
| More Detail: | N-Channel 55V 75A (Tc) 272W (Tc) Surface Mount D2P... |
| DataSheet: | BUK7C08-55AITE,118 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 272W (Tc) |
| FET Feature: | Current Sensing |
| Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 116nC @ 10V |
| Series: | Automotive, AEC-Q101, TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 8 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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Introduction to BUK7C08-55AITE, 118 Application Field and Working Principle
BUK7C08-55AITE is a type of N-Channel Enhancement Mode Field Effect Transistor (FET). It is a common electronic component that is used in many applications across different industries. The purpose of this article is to provide an overview of the BUK7C08-55AITE, its application fields and its working principle.
Specifications of BUK7C08-55AITE FETs:
VDS (Qg) : 20V (10uA)
ID : 3.1A (VGS=10V)
RDS(on) : 1.5 Ohm (VGS=10V)
QGD : 3.5nC
Pd : 8.2W
Applications of BUK7C08-55AITE FETs
BUK7C08-55AITE FETs are commonly used in loads switch applications and direct battery charging circuits. They can be used to switch high voltage and low current signals, and are also used as buffers and in power amplifier circuits. Other applications include RF switches, oscillator circuits and function generators. They are also used in analog switches such as relays, breakers and thyristors.
BUK7C08-55AITE FETs are also used in automotive applications such as lamp dimmers, EMI filters and engine controls. They are also used in microwave ovens and defrosters.
Working Principle of BUK7C08-55AITE FETs
The BUK7C08-55AITE FET is a type of Field Effect Transistor (FET), a voltage-controlled device. When used in a circuit, a small amount of current is applied to the Gate terminal, creating a local electrostatic field which modulates the voltage and current between the Source and Drain terminals. This modulation is caused by the barrier potential of the Gate-Source junction.
The BUK7C08-55AITE FET has a 10 uA Gate-Source threshold and a Qg of 20V. This means that it can switch between an on and off state with a Gate-Source voltage of 20V, and with a Gate-Source current of 10 uA. In the ‘on’ state, the FET will conduct current from the Source to the Drain, and in the ‘off’ state, the FET will not conduct any current from the Source to the Drain, allowing for a high-impedance state.
Conclusion
BUK7C08-55AITE N-Channel Enhancement Mode Field Effect Transistors are widely used in many applications across different industries. They are commonly used as switches, buffers, amplifiers, oscillators and relays. The Gate-Source threshold of 10uA and Qg of 20V allows the FET to switch between an on and off state allowing high voltage and low current signals to be controlled and modulated.
The specific data is subject to PDF, and the above content is for reference
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BUK7C08-55AITE,118 Datasheet/PDF