Fpga lab quantity 72 - Allicdata Electronics

Related Categories

1 2 >

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IXFD26N50Q-72-N D	IXFD26N50Q-72	IXYS	View more Series: HiPerFET Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Supplier Device Package: Die Package / Case: Die	1000 Order	1+: $0
IXFD24N50Q-72-N D	IXFD24N50Q-72	IXYS	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
IXFD23N60Q-72-N D	IXFD23N60Q-72	IXYS	View more Series: HiPerFET Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Supplier Device Package: Die Package / Case: Die	1000 Order	1+: $0
IXFD28N50Q-72-N D	IXFD28N50Q-72	IXYS	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
IXFD40N30Q-72-N D	IXFD40N30Q-72	IXYS	View more Series: HiPerFET Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Supplier Device Package: Die Package / Case: Die	1000 Order	1+: $0
T-FD28N50Q-72-N D	T-FD28N50Q-72	IXYS	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
3N164-ND	3N164	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 300 Ohm @ 100A, 20V Vgs(th) (Max) @ Id: 5V @ 10A Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Power Dissipation (Max): 375mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-72 Package / Case: TO-206AF, TO-72-4 Metal Can	1000 Order	1+: $0
3N163-2-ND	3N163-2	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 250 Ohm @ 100A, 20V Vgs(th) (Max) @ Id: 5V @ 10A Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Power Dissipation (Max): 375mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-72 Package / Case: TO-206AF, TO-72-4 Metal Can	1000 Order	1+: $0
3N163-E3-ND	3N163-E3	Vishay Siliconix	View more Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 250 Ohm @ 100A, 20V Vgs(th) (Max) @ Id: 5V @ 10A Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Power Dissipation (Max): 375mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-72 Package / Case: TO-206AF, TO-72-4 Metal Can	1000 Order	1+: $0
3N163-ND	3N163	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 250 Ohm @ 100A, 20V Vgs(th) (Max) @ Id: 5V @ 10A Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Power Dissipation (Max): 375mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-72 Package / Case: TO-206AF, TO-72-4 Metal Can	1000 Order	1+: $0
568-9738-5-ND	BUK9575-100A,12 7	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 1704pF @ 25V Power Dissipation (Max): 99W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
1727-2524-2-ND	PMV100ENEAR	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 15V Power Dissipation (Max): 460mW (Ta), 4.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
SI2302-TPMSTR-N D	SI2302-TP	Micro Commercial Co	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 50A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 237pF @ 10V Power Dissipation (Max): 1.25W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	21000 Order	3000+: $0.1123
IXFN72N55Q2-ND	IXFN72N55Q2	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 258nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Power Dissipation (Max): 890W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	1000 Order	10+: $22.949
SI4833ADY-T1-GE 3-ND	SI4833ADY-T1-GE 3	Vishay Siliconix	View more Series: LITTLE FOOT Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.93W (Ta), 2.75W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
497-16133-2-ND	STB45N40DM2AG	STMicroelectronics	View more Series: Automotive, AEC-Q101, MDmesh DM2 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $1.8176
PMPB55XNEAX-ND	PMPB55XNEAX	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V Power Dissipation (Max): 550mW (Ta) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN2020MD (2x2) Package / Case: 6-UDFN Exposed Pad	1000 Order	1+: $0
SI2341DS-T1-E3- ND	SI2341DS-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Power Dissipation (Max): 710mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
FCH072N60F-F085 -ND	FCH072N60F-F085	ON Semiconductor	View more Series: Automotive, AEC-Q101, SuperFET II Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6330pF @ 100V Power Dissipation (Max): 481W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	55 Order	1+: $5.7015 10+: $5.1339 450+: $3.879 900+: $3.2629
IXTH41N25-ND	IXTH41N25	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	1000 Order	30+: $4.4854
FCH072N60F-ND	FCH072N60F	ON Semiconductor	View more Series: FRFET, SuperFET II Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8660pF @ 100V Power Dissipation (Max): 481W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	572 Order	--
IXTA32N20T-ND	IXTA32N20T	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	50+: $1.4309
CWDM305PTR-ND	CWDM305P TR13	Central Semiconductor Corp	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V Power Dissipation (Max): 2W (Ta) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	7500+: $0.0816
1727-2735-2-ND	PMV90ENER	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 15V Power Dissipation (Max): 460mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	3000+: $0.0493
TPH3212PS-ND	TPH3212PS	Transphorm	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Rds On (Max) @ Id, Vgs: 72 mOhm @ 17A, 8V Vgs(th) (Max) @ Id: 2.6V @ 400uA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V Vgs (Max): 18V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 400V Power Dissipation (Max): 104W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	591 Order	1+: $10.584 10+: $9.6214 25+: $8.8999 100+: $8.1782 250+: $7.4565
DMN2046U-13DI-N D	DMN2046U-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 292pF @ 10V Power Dissipation (Max): 760mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	10000+: $0.0421
DMP2123LDITR-ND	DMP2123L-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 16V Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	84000 Order	--
SI4447DY-T1-GE3 TR-ND	SI4447DY-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 15V, 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 4.5A, 15V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	2500 Order	--
1727-7186-2-ND	BUK9275-100A,11 8	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 21.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Power Dissipation (Max): 88W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	20000 Order	2500+: $0.2405
SI8810EDB-T2-E1 TR-ND	SI8810EDB-T2-E1	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 72 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 8nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA	3000 Order	--
SIHG47N65E-GE3- ND	SIHG47N65E-GE3	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 5682pF @ 100V Power Dissipation (Max): 417W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	294 Order	--
SCH1439-TL-WOST R-ND	SCH1439-TL-W	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563/SCH6 Package / Case: SOT-563, SOT-666	1000 Order	1+: $0
IXFB72N55Q2-ND	IXFB72N55Q2	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 258nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Power Dissipation (Max): 890W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264 Package / Case: TO-264-3, TO-264AA	1000 Order	--
497-16136-5-ND	STP45N40DM2AG	STMicroelectronics	View more Series: Automotive, AEC-Q101, MDmesh DM2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	1+: $4.0572 50+: $3.2603 100+: $2.9705 500+: $2.4053 1000+: $2.0286
SCH1439-TL-H-ND	SCH1439-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: SOT-563, SOT-666	1000 Order	1+: $0
R6047ENZ1C9-ND	R6047ENZ1C9	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 25.8A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V Power Dissipation (Max): 120W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	226 Order	1+: $5.0526 10+: $4.548 100+: $3.7395 500+: $3.1331 1000+: $2.7288
785-1606-2-ND	AON2290	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V Power Dissipation (Max): 2.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN-EP (2x2) Package / Case: 6-UDFN Exposed Pad	1000 Order	--
IXFR80N50Q3-ND	IXFR80N50Q3	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Power Dissipation (Max): 570W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247 Package / Case: TO-247-3	1000 Order	1+: $17.7786 30+: $15.1124 120+: $14.0456
SIHW47N65E-GE3- ND	SIHW47N65E-GE3	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5682pF @ 100V Power Dissipation (Max): 417W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	1000 Order	1+: $0
IXFR80N50P-ND	IXFR80N50P	IXYS	View more Series: HiPerFET, PolarHT Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 12700pF @ 25V Power Dissipation (Max): 360W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247 Package / Case: ISOPLUS247	9 Order	1+: $13.0536 30+: $10.9773 120+: $10.0872

1 2 >

Hot Searches: fpga lab quantity 72 fpga lab quantity fpga lab quantity 26 fpga lab quantity 32 fpga lab quantity 42 fpga lab quantity 48 fpga lab quantity 63 fpga lab quantity 64 fpga lab quantity 80 fpga clb quantity 72 fpga clb quantity fpga clb quantity 26 fpga clb quantity 32 fpga clb quantity 42 fpga clb quantity 48 fpga clb quantity 63 fpga clb quantity 64 fpga clb quantity 80 fpga unit quantity microcontroller fpga

Search Result:fpga lab quantity 72

Related Categories