SI2302-TP

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The SI2302-TP is a high-speed, low-cost N-channel enhancement-mode power MOSFET tailored for automotive application. The Device combines low input capacitance, low gate charge, low gate to drain charge, high ruggedness, and fast switching speed of modern power MOSFETs and low on resistance of a bipolar device.

Application Field:

The SI2302-TP is suitable for wide range of applications, including hot-swap controllers, battery management, high frequency DC/DC converter, automotive power management, light dimmer and switching, and other industrial appliance applications.

Working Principle:

This device is an N-channel MOSFET based on the conventional MOSFET structure, where source and drain are connected to the substrate, forming a drain-to-source conducting channel. The gate voltage determines the width of the channel, and the associated drain current. Input capacitance is determined by the ratio of the gate width to the length of the channel, thus making lower input capacitance. Also, the drain-to-source voltage works in parallel to the input capacitance, allowing higher switching speeds by maintaining a constant capacitance value.

The on-resistance of the device is a combination of two separate effects, the channel resistance and the output capacitance. This allows for low-power loss in the channel under high switching speeds. The output capacitance is kept to a minimum through the optimized device structure, allowing for higher efficiency in switching application.

The gate-drain charge is determined by the ratio of the gate width to the length of the channel. This causes a very small gate-drain charge, enabling high-frequency conversion applications. The high-ruggedness of the device is achieved through the addition of low-stress source/drain implants that prevent overshoot and ringing in the device.

The high-frequency performance of the device is further enhanced by the isolating the gate and source parasitic capacitance. The parasitic capacitance of the gate and source is isolated by an additional layer of insulating material, thus eliminating the interference.

In addition, advanced series of stress/temperature/voltage limiting network is employed to ensure that the device operates within its performance limits, even under the rigorous conditions. The advanced series of limiting networks offer improved ruggedness and reliability in addition to easy programming and simple on-chip diagnostics.

Overall, the SI2302-TP offers a high-performance, low-cost solution in power efficiency, cost, and performance. The device is well suited for automotive applications, as well as high-frequency switching applications.

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