IXFR80N50Q3

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The IXFR80N50Q3 is a field-effect transistor (FET) made from high-performance silicon material and designed for use in power switching applications. It is a single structure N-Transfer channel MOSFET that works under switching conditions. It is designed to minimize on-state resistance, high blocking voltage capability, fast switching speed and low gate charge. This transistor is particularly suited for fast switching applications in industrial, automotive and aerospace areas.

The IXFR80N50Q3 is manufactured in a low-voltage/high-current package that enables high currents and higher voltage blocking capacity. The 80A max drain current rating can be used in both load switching applications and in power supply designs where improved switching performance is required. Its low gate resistance and its 1200V maximum drain-source blocking voltage capability make it an excellent choice for cost effective applications where the voltage is over 24V.

The heart of any MOSFET is its body region which is carved out of silicon. The IXFR80N50Q3 FET\'s body is composed of a high-performance N-channel enhancement-mode MOS (silicon dioxide-oxide) structure. This architecture provides low on-resistance as well as improved switching speed and higher drain current ability. Furthermore, the large gate width of IXFR80N50Q3 ensures high switching speed, even in a wide range of temperatures.

The working principle of IXFR80N50Q3 involves the application of a negative voltage on its gate terminal. By reducing the voltage, a thinner inversion layer between the source and drain is created. This causes a decrease in the current and the transistor is said to be in the ‘on-state’. Conversely, when more positive voltage is applied, current increases and the transistor is said to be in the ‘off-state’. A higher positive voltage on the gate increases the width of the inversion layer and decreases drain current, thereby increasing the transistor’s blocking voltage and making it more robust.

The key features of the IXFR80N50Q3 include its low static and dynamic parameters. Its static gate-source threshold is low when compared to other MOSFETs and it provides low on-state and gate-drain capacitance. The fast switching capability of IXFR80N50Q3 is also beneficial in applications, where there is a need for higher frequencies and better noise immunity. This effect is further enhanced by the fact that it does not require a gate drive for switching ON/OFF. Moreover, its saturated drain-source on-resistance is low, which reduces the wasted power and thus improves the efficiency of the circuit.

In conclusion, the IXFR80N50Q3 is an ideal choice if you need a high power switching device that works on lower voltages and has a fast switching speed along with a robust and a reliable performance. It can be used in a wide range of industrial, automotive and aerospace applications due to its features such as higher drain current capacity and reduced on-resistance.

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