Allicdata Part #: | SI4447DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4447DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 40V 3.3A 8-SOIC |
More Detail: | P-Channel 40V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-... |
DataSheet: | SI4447DY-T1-GE3 Datasheet/PDF |
Quantity: | 2500 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 3.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 15V, 10V |
Rds On (Max) @ Id, Vgs: | 72 mOhm @ 4.5A, 15V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 805pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 1.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI4447DY-T1-GE3 is a single-channel, N-channel, enhancement-mode vertical DMOS FET device that can be used in a variety of applications. Its main features include a low on-resistance of 100mΩ, high efficiency and high switching speed. The device is used in various types of applications such as power conversion, motor control, digital signal amplification, switch mode power supply and audio amplification.
The working principle of the SI4447DY-T1-GE3 is fairly straightforward. This device uses a vertical structure to maximize the on-resistance while providing a low-R on. When a voltage is applied to the gate of the device, the current flowing from the drain to the source increases, resulting in a low resistance and thereby allowing higher current levels to flow through the device. This results in increased efficiency and faster switching speeds.
The SI4447DY-T1-GE3 also provides protection against electrostatic discharge (ESD). This feature makes it suitable for use in applications that require high levels of ESD protection, such as consumer electronic components. It also features a high-speed switching capability and is capable of reaching frequencies up to 100MHz.
One popular application of the SI4447DY-T1-GE3 is its use in switch mode power supplies. In this type of application, the device is used to control the voltage or current output of the power supply. The device is capable of handling high output power levels, allowing the power supply to reach higher efficiency levels than traditional two-transistor solutions.
Another application for the SI4447DY-T1-GE3 is in motor control. This type of application requires the device to handle high-voltage and high-current levels in order to accurately control the motor’s speed and position. The device is capable of performing such tasks in a reliable and efficient manner, while maintaining low power consumption levels.
The SI4447DY-T1-GE3 can also be used in digital signal amplification, where it performs the task of amplifying low-level signals before they can be further processed. This type of application is important in numerous industries, including audio/video, telecommunications, and medical technology. Its low power consumption makes it an ideal choice for this type of application.
Overall, the SI4447DY-T1-GE3 is a versatile and reliable device that can be used in a variety of applications. Its low on-resistance and high performance make it a great choice for applications that require efficient and high-speed switching, as well as those that require protection against ESD. Its ability to handle high-output power levels also makes it an attractive choice for applications such as switch mode power supplies and motor control.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI4448DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 12V 50A 8-SOI... |
SI4401DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 8.7A 8-SO... |
SI4404DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 15A 8-SOI... |
SI4412ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 5.8A 8-SO... |
SI4465ADY-T1-GE3 | Vishay Silic... | 0.68 $ | 5000 | MOSFET P-CH 8V 8SOICP-Cha... |
SI4430BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 14A 8-SOI... |
SI4447DY-T1-GE3 | Vishay Silic... | -- | 2500 | MOSFET P-CH 40V 3.3A 8-SO... |
SI4410DY,518 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 30V SOT96-1N-... |
SI4410DY | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 10A 8-SOI... |
SI4435DYTR | Infineon Tec... | -- | 1000 | MOSFET P-CH 30V 8A 8-SOIC... |
SI4420DY | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 12.5A 8-S... |
SI4410DYPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 10A 8-SOI... |
SI4420DYPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 12.5A 8-S... |
SI4435DYPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 30V 8A 8-SOIC... |
SI4420DYTR | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 12.5A 8-S... |
SI4403BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 7.3A 8SOI... |
SI4409DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 150V 1.3A 8-S... |
SI4418DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 200V 2.3A 8-S... |
SI4446DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 40V 3.9A 8-SO... |
SI4470EY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 9A 8-SOIC... |
SI4484EY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 4.8A 8-S... |
SI4401DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 8.7A 8-SO... |
SI4404DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 15A 8-SOI... |
SI4406DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 13A 8-SOI... |
SI4406DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 13A 8-SOI... |
SI4409DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 150V 1.3A 8-S... |
SI4411DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 9A 8-SOIC... |
SI4411DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 9A 8-SOIC... |
SI4412ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 5.8A 8-SO... |
SI4438DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 36A 8-SOI... |
SI4438DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 36A 8-SOI... |
SI4448DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 12V 50A 8-SOI... |
SI4453DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 10A 8-SOI... |
SI4453DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 12V 10A 8-SOI... |
SI4462DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 200V 1.15A 8-... |
SI4466DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 9.5A 8-SO... |
SI4483EDY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 10A 8-SOI... |
SI4486EY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 5.4A 8-S... |
SI4493DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 10A 8SOIC... |
SI4493DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 10A 8SOIC... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...