TPH3212PS

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TPH3212PS is a High Voltage Enhancement-Mode Vertical DMOS FET, which is particularly designed to minimize the ON-state resistance through an extended channel region and a 105µm diameter gate/drain structure. This MOSFET is suitable for use in switching and amplifier circuits such as motor drive and different consumer applications. The TPH3212PS also offers excellent thermal stability, low gate charge and low total gate charge.

The TPH3212PS is a single device, meaning it consists of a single P-channel MOSFET used in the application. The single MOSFET packages the diodes inside the integrated circuit, by allowing electrons to travel in either direction if the drain and source are of opposite polarities. As with all MOSFETs, the gate voltage has a direct relationship to the amount of current that is allowed to pass through the channel from the drain to the source. By increasing the gate voltage, more current can be passed, allowing for switching and amplification to occur.

The TPH3212PS application field and working principle are as follows: In this MOSFET, there is an N-Channel and P-Channel, which serves as both the output transistor and the input transistor. When voltage is applied to the gate, electrons will be drawn downwards and will create a depletion region on the substrate side of the MOSFET, while on the top side of the MOSFET it will create an enhancement region. The P-Channel allows the electrons to flow from the source to the drain, while the N-Channel, which has a lower electric resistance, allows the electric current to flow from the drain to the source.

The TPH3212PS has an exceptionally low on-state resistance, which is useful for applications such as motor drivers and other consumer applications. Its low charge-gate leakage transistor and low total gate charge allows for the device to efficiently switch without consuming too much power. This device is also highly thermally stable and can operate at temperatures of up to 175°C, making it suitable for use in a wide range of industrial, automotive, and consumer applications.

Due to the single package, this device is suitable for applications where space is limited and only one MOSFET is needed. The TPH3212PS also offers excellent junction capacitance and reverse transfer capacitance, along with a low turn-off and turn-on times. In general, this MOSFET is suitable for high voltage applications requiring low on-state losses, such as Welding, Plasma Etchers, or Inverter applications.

In conclusion, the TPH3212PS is a single-device High Voltage Enhancement-Mode Vertical DMOS FET, with a low on-state resistance, which is useful for various application fields. This MOSFET is highly thermally stable, has a low gate charge, and a low reverse transfer capacitance, making it a good choice for applications in High Voltage and Low Losses. It is also suitable for use in applications that require limited space and only one MOSFET.

The specific data is subject to PDF, and the above content is for reference