PMPB55XNEAX Allicdata Electronics
Allicdata Part #:

PMPB55XNEAX-ND

Manufacturer Part#:

PMPB55XNEAX

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V 3.8A 6DFN2020MD
More Detail: N-Channel 30V 3.8A (Ta) 550mW (Ta) Surface Mount 6...
DataSheet: PMPB55XNEAX datasheetPMPB55XNEAX Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-DFN2020MD (2x2)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 550mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V
Vgs (Max): ±12V
Series: Automotive, AEC-Q101
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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The PMPB55XNEAX is a single N-Channel Metal-Oxide Semiconductor Field Effect Transistor (MOSFET). It is designed to bestow exceptional performance in many applications requiring fast switching, low on-resistance and low gate drive. The PMPB55XNEAX has a wide variety of application fields, including data transmission, power supply/converters, motor control, telecommunication, display control, and power management. In addition, it is suitable for controlling any circuit that has a wide range of voltages. The main features of the PMPB55XNEAX include on-resistance, breakdown voltage, and low gate drive.

The PMPB55XNEAX has a low on-resistance which is ideal for high speed switching applications. This on resistance can be adjusted depending on the particular application, as it is configurable with the gate-source voltage. Its breakdown voltage of 650V makes it extremely valuable for applications dealing with high voltages. The PMPB55XNEAX also has a low gate drive, thus enabling it to handle large amounts of current without significant power dissipation.

The PMPB55XNEAX operates at a range of voltages, including 12V, 15V, 18V, and 24V. It is available in different packages, such as TO-220, TO-220-3L, and TO-3P, depending on its particular application. The TO-220 package is the most common and it is used in a multitude of applications including motor controls, power supplies, and other high power and current handling applications. The TO-220-3L, on the other hand, has a slightly lower on-resistance but is still capable of handling large amounts of current. The TO-3P, while offering the highest on-resistance, offers the best thermal performance and can handle applications requiring extreme high power.

The PMPB55XNEAX works on the principle of negative current control. When a positive voltage is applied to the gate of the transistor, the source-drain voltage is lowered, therefore increasing the current flowing in the source-drain. This type of current control is ideal for applications where either source-drain current must be reduced or increased. The PMPB55XNEAX can be used as a switch in circuits as it can be turned on or off using the gate voltage.

The PMPB55XNEAX is a versatile single N-Channel Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) which is suitable for a wide range of applications. It is capable of handling high voltages due to its breakdown voltage of 650V, and has a low on-resistance. This on-resistance can be adjusted with the gate-source voltage, making it a cost-effective solution. In addition, the PMPB55XNEAX offers low gate drive and can also be used in circuits as a switch due to its ability to be turned on and off using the gate voltage. This makes it a useful component for many circuit designs.

The specific data is subject to PDF, and the above content is for reference

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