Allicdata Part #: | PMPB55XNEAX-ND |
Manufacturer Part#: |
PMPB55XNEAX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 3.8A 6DFN2020MD |
More Detail: | N-Channel 30V 3.8A (Ta) 550mW (Ta) Surface Mount 6... |
DataSheet: | PMPB55XNEAX Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 4.5V |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | 6-DFN2020MD (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 550mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 255pF @ 15V |
Vgs (Max): | ±12V |
Series: | Automotive, AEC-Q101 |
Vgs(th) (Max) @ Id: | 1.25V @ 250µA |
Rds On (Max) @ Id, Vgs: | 72 mOhm @ 3.8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The PMPB55XNEAX is a single N-Channel Metal-Oxide Semiconductor Field Effect Transistor (MOSFET). It is designed to bestow exceptional performance in many applications requiring fast switching, low on-resistance and low gate drive. The PMPB55XNEAX has a wide variety of application fields, including data transmission, power supply/converters, motor control, telecommunication, display control, and power management. In addition, it is suitable for controlling any circuit that has a wide range of voltages. The main features of the PMPB55XNEAX include on-resistance, breakdown voltage, and low gate drive.
The PMPB55XNEAX has a low on-resistance which is ideal for high speed switching applications. This on resistance can be adjusted depending on the particular application, as it is configurable with the gate-source voltage. Its breakdown voltage of 650V makes it extremely valuable for applications dealing with high voltages. The PMPB55XNEAX also has a low gate drive, thus enabling it to handle large amounts of current without significant power dissipation.
The PMPB55XNEAX operates at a range of voltages, including 12V, 15V, 18V, and 24V. It is available in different packages, such as TO-220, TO-220-3L, and TO-3P, depending on its particular application. The TO-220 package is the most common and it is used in a multitude of applications including motor controls, power supplies, and other high power and current handling applications. The TO-220-3L, on the other hand, has a slightly lower on-resistance but is still capable of handling large amounts of current. The TO-3P, while offering the highest on-resistance, offers the best thermal performance and can handle applications requiring extreme high power.
The PMPB55XNEAX works on the principle of negative current control. When a positive voltage is applied to the gate of the transistor, the source-drain voltage is lowered, therefore increasing the current flowing in the source-drain. This type of current control is ideal for applications where either source-drain current must be reduced or increased. The PMPB55XNEAX can be used as a switch in circuits as it can be turned on or off using the gate voltage.
The PMPB55XNEAX is a versatile single N-Channel Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) which is suitable for a wide range of applications. It is capable of handling high voltages due to its breakdown voltage of 650V, and has a low on-resistance. This on-resistance can be adjusted with the gate-source voltage, making it a cost-effective solution. In addition, the PMPB55XNEAX offers low gate drive and can also be used in circuits as a switch due to its ability to be turned on and off using the gate voltage. This makes it a useful component for many circuit designs.
The specific data is subject to PDF, and the above content is for reference
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