BUK9575-100A,127 Allicdata Electronics
Allicdata Part #:

568-9738-5-ND

Manufacturer Part#:

BUK9575-100A,127

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 100V 23A TO220AB
More Detail: N-Channel 100V 23A (Tc) 99W (Tc) Through Hole TO-2...
DataSheet: BUK9575-100A,127 datasheetBUK9575-100A,127 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 99W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1704pF @ 25V
Vgs (Max): ±15V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 72 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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BUK9575-100A is one of the many types of transistors or field-effect transistors (FETs) available in the market. FETs are typically categorized into single or dual type, the latter being a two-terminal device while the former has three terminals. The BUK9575-100A belongs to the single FET type and is useful for switching, signal amplification and signal generation applications.

A FET, like the BUK9575-100A, has three terminals: source (S), drain (D), and gate (G). In the BUK9575-100A, the source and the drain are heavily doped semiconductor layers and the gate is insulated using an oxide layer. The source and drain are connected to a voltage source, which can be either AC or DC, and the gate voltage is applied to the gate terminal.

When the gate voltage is low, the transistor is turned off and no current passes through the two terminals. However, when the gate voltage is raised beyond a certain threshold value, the transistor will turn on, allowing current to pass between the source and drain. This is referred to as the “on” or “saturated” state. The corresponding transfer characteristics can be represented by a curve, which shows the relationship between the gate voltage and the current flowing through the FET.

The BUK9575-100A is commonly used in many applications, such as amplifiers, oscillators, and frequency dividers. In audio amplifiers, it is used to increase the signal level coming out from the microphone. In oscillators, such as the Colpitts and Hartley oscillators, the transistor acts as an amplifier to generate waveforms. Frequency dividers and clock dividers, meanwhile, use the transistor’s switching ability to reduce the clock speed of a device.

The BUK9575-100A is also used in high power applications, such as motor control and power converters, as it can handle up to a peak current of 40A. It is also used in switching power supplies as it can handle a continuous DC current of up to 20A and a drain-to-source voltage of up to 60V.

In addition, the BUK9575-100A is also used in small-signal applications, where it is employed in the design of comparators, logic gates, timers and pulse generation circuits. For these types of applications, the FET’s low gate capacitance and low input resistance are particularly beneficial.

The BUK9575-100A transistor is a powerful and versatile device that is used in a wide variety of applications. It can operate efficiently under both AC and DC voltages, and it has a wide range of current and voltage ratings. The low gate capacitance and low input resistance make it an ideal choice for low-power and small-signal applications, while its high power rating makes it suitable for larger applications. With all these features, the BUK9575-100A is an indispensable component in any engineer’s toolkit.

The specific data is subject to PDF, and the above content is for reference

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