Infineon modulator ic - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IPD90N06S407ATM A1TR-ND	IPD90N06S407ATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 40A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRFHS8242TR2PBF CT-ND	IRFHS8242TR2PBF	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 9.9A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25A Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 653pF @ 10V Power Dissipation (Max): 2.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-PowerVDFN	1000 Order	--
IRF6728MTR1PBFT R-ND	IRF6728MTR1PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 23A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 2.35V @ 100A Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4110pF @ 15V Power Dissipation (Max): 2.1W (Ta), 75W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET MX Package / Case: DirectFET Isometric MX	1000 Order	1+: $0
IRFH7187TRPBF-N D	IRFH7187TRPBF	Infineon Technologies	View more Series: FASTIRFET, HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 18A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.6V @ 150A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2116pF @ 50V Power Dissipation (Max): 3.8W (Ta), 132W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
VM0550-2F-ND	VM0550-2F	IXYS	View more Series: HiPerFET Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 590A (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 2000nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50000pF @ 25V Power Dissipation (Max): 2200W Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: Module	1000 Order	1+: $0
APTM100U13SG-ND	APTM100U13SG	Microsemi Corporation	View more Packaging: Bulk Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 145 mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 2000nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 31600pF @ 25V Power Dissipation (Max): 1250W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	1000 Order	1+: $0
APTM50UM19SG-ND	APTM50UM19SG	Microsemi Corporation	View more Packaging: Bulk Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 163A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 19 mOhm @ 81.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V Power Dissipation (Max): 1136W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	1000 Order	1+: $0
APTM20UM05SG-ND	APTM20UM05SG	Microsemi Corporation	View more Packaging: Bulk Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 317A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V Power Dissipation (Max): 1136W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	1000 Order	1+: $0
APTM20UM09SG-ND	APTM20UM09SG	Microsemi Corporation	View more Packaging: Bulk Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 74.5A, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 217nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 12300pF @ 25V Power Dissipation (Max): 780W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	1000 Order	1+: $0
APTM50UM25SG-ND	APTM50UM25SG	Microsemi Corporation	View more Packaging: Bulk Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 149A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 17500pF @ 25V Power Dissipation (Max): 1250W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	1000 Order	1+: $0
SCTWA30N120-ND	SCTWA30N120	STMicroelectronics	View more Series: * Part Status: Active	1000 Order	600+: $12.1716
SCTWA10N120-ND	SCTWA10N120	STMicroelectronics	View more Series: * Part Status: Active	1000 Order	600+: $4.7867
SCTWA20N120-ND	SCTWA20N120	STMicroelectronics	View more Series: * Part Status: Active	1000 Order	600+: $5.8373
MKE38P600LB-TRR -ND	MKE38P600LB-TRR	IXYS	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Mounting Type: Surface Mount Supplier Device Package: ISOPLUS-SMPD.B Package / Case: 9-SMD Module	1000 Order	200+: $22.8712
MKE38P600LB-ND	MKE38P600LB	IXYS	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Mounting Type: Surface Mount Supplier Device Package: ISOPLUS-SMPD.B Package / Case: 9-SMD Module	1000 Order	45+: $24.6084
APT25SM120S-ND	APT25SM120S	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 10A, 20V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 20V Power Dissipation (Max): 175W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Chassis Mount Supplier Device Package: D3 Package / Case: D-3 Module	1000 Order	1+: $0
VS-FC420SA10GI- ND	VS-FC420SA10	Vishay Semiconductor Diodes Division	View more Series: TrenchFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 435A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.15 mOhm @ 200A, 10V Vgs(th) (Max) @ Id: 3.8V @ 750A Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 17300pF @ 25V Power Dissipation (Max): 652W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	156 Order	1+: $15.2586 10+: $14.071 100+: $12.0155
VS-FC420SA15-ND	VS-FC420SA15	Vishay Semiconductor Diodes Division	View more Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 400A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.75 mOhm @ 200A, 10V Vgs(th) (Max) @ Id: 5.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Power Dissipation (Max): 909W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	1000 Order	1+: $16.4808 10+: $15.2013 25+: $14.518 100+: $12.9808 250+: $12.383 500+: $11.7851
VS-FC270SA20-ND	VS-FC270SA20	Vishay Semiconductor Diodes Division	View more Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 287A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 200A, 10V Vgs(th) (Max) @ Id: 4.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 16500pF @ 100V Power Dissipation (Max): 937W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	1000 Order	1+: $17.0415 10+: $15.7191 25+: $15.0126 100+: $13.4231 250+: $12.805 500+: $12.1869
MKE38RK600DFELB -ND	MKE38RK600DFELB	IXYS	View more Series: CoolMOS Packaging: Tray Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ISOPLUS-SMPD.B Package / Case: 9-SMD Module	1000 Order	45+: $15.1246
MKE38RK600DFELB -TRR-ND	MKE38RK600DFELB -TRR	IXYS	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ISOPLUS-SMPD.B Package / Case: 9-SMD Module	1000 Order	200+: $14.057
APTM100UM65SCAV G-ND	APTM100UM65SCAV G	Microsemi Corporation	View more Series: POWER MOS 7 Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 145A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 78 mOhm @ 72.5A, 10V Vgs(th) (Max) @ Id: 5V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 28500pF @ 25V Power Dissipation (Max): 3250W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: Module	1000 Order	100+: $184.577
FQPF10N60C_F105 -ND	FQPF10N60C_F105	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 730 mOhm @ 4.75A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
FQPF13N50C_F105 -ND	FQPF13N50C_F105	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 25V Power Dissipation (Max): 48W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
FDMC6683PZ-ND	FDMC6683PZ	ON Semiconductor	View more Series: PowerTrench Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 7995pF @ 10V Power Dissipation (Max): 26W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3)	1000 Order	--
FQP13N50C_F105- ND	FQP13N50C_F105	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 25V Power Dissipation (Max): 195W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
KGF12N05-400-SP -ND	KGF12N05-400-SP	Renesas Electronics America Inc.	View more Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 5.5V Current - Continuous Drain (Id) @ 25C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 4.5V Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 12A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 3.5V Vgs (Max): 5.5V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 5.5V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WLCSP (1.47x1.47) Package / Case: 6-SMD, No Lead	1000 Order	1+: $0
CSD19506KTTT-ND	CSD19506KTTT	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 200A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 40V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DDPAK/TO-263-3 Package / Case: TO-263-4, DPak (3 Leads + Tab), TO-263AA	1000 Order	150+: $2.8294
FDMC7672_F125-N D	FDMC7672_F125	ON Semiconductor	View more Series: PowerTrench, SyncFET Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 16.9A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 16.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 15V Power Dissipation (Max): 2.3W (Ta), 33W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	1000 Order	1+: $0

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