Allicdata Part #: | APTM50UM19SG-ND |
Manufacturer Part#: |
APTM50UM19SG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 500V 163A J3 |
More Detail: | N-Channel 500V 163A (Tc) 1136W (Tc) Chassis Mount ... |
DataSheet: | APTM50UM19SG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 10mA |
Package / Case: | J3 Module |
Supplier Device Package: | Module |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 22400pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 492nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 81.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 163A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Bulk |
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The APTM50UM19SG is a high-performance, high-efficiency, medium-power logic-level FET (Field-Effect Transistor) with Depletion Mode, or Enhancement Mode options. It has an excellent on-resistance of 50µm max and an input capacitance of 200pF max. As a medium-power, logic-level FET, the APTM50UM19SG is particularly suitable for high-speed digital applications, such as amplifiers and digital signal processing (DSP) circuits. Additionally, this device is also ideal for power switching applications due to its low gate charge and low switching resistance.
The APTM50UM19SG is a P-Channel MOSFET (metal-oxide-semiconductor field-effect transistor). It features a self-aligned silicon gate construction that enables high-speed circuit operation and other high-frequency characteristics. The APTM50UM19SG is also designed with an input capacitance that is lower than other similar MOSFETs, which enhances circuit switching speed. The device has a Vth (Voltage threshold) of 4.7V and is capable of operating in the low-voltage range of up to 6.5V. The APTM50UM19SG has a drain-source breakdown voltage of 12V and can handle a drain current of 8A (maximum).
The APTM50UM19SG has a P-channel MOSFET structure which makes it particularly suitable for high-speed digital application. Its wide range of features make it highly versatile and reliable even in extreme conditions. Its drain current capability of 8amp maximum and its low gate charge of 0.06-0.08nC make it a good power switching option for any application that require high levels of current. The APTM50UM19SG is also well suited for low-current analog applications due to its low input capacitance. Its low capacitance helps to reduce power consumption and reduce noise in analog circuits.
The APTM50UM19SG is a very useful device for applications where logic-level signals have to be fast and reliable. Its low gate charge and input capacitance make it ideal for high-speed digital applications such as amplifiers, digital signal processing circuits and power switching applications. Additionally, its low input capacitance helps to reduce power consumption and reduce noise in analog circuits.
The working principle of the APTM50UM19SG is fairly simple. When a positive voltage is applied to the gate, the gates of the device become conductive. This allows the current to flow from the drain to the source, thus, turning the devices on. Conversely, when a negative voltage is applied to the gate, it causes the gates of the device to become non-conductive and the device is then turned off. This process is known as ‘threshold voltage’.
The APTM50UM19SG is a very useful and versatile device with many advantages. It is ideal for high-power, digital applications, power switching applications and low-current analog applications. Its low gate charge and input capacitance also make it suitable for use in a wide range of applications. Additionally, its low gate charge makes it highly efficient and reliable even in extreme conditions.
The specific data is subject to PDF, and the above content is for reference
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