IRFHS8242TR2PBF

Vgs(th) (Max) @ Id:	2.35V @ 25µA
Package / Case:	6-PowerVDFN
Supplier Device Package:	6-PQFN (2x2)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	653pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	10.4nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	13 mOhm @ 8.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	9.9A (Ta), 21A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Cut Tape (CT)

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IRFHS8242TR2PBF Application Field and Working Principle

The IRFHS8242TR2PBF is a Field Effect Transistor (FET) designed to be utilized in a variety of applications. It belongs to a category of FETs known as single-gate MOSFETs, or Metal Oxide Semiconductor Field Effect Transistors. This type of FET is adept at amplifying and switching electrical signals, and is thus commonly used in digital circuits that require very low power consumption and/or a high level of electrical isolation The IRFHS8242TR2PBF is a special type of MOSFET, known as an enhancement mode device, which does not need a negative gate voltage in order to turn the device “on” (making it conduct current). This unique feature makes the IRFHS8242TR2PBF well suited for applications such as analog switching, amplification, and power control. The IRFHS8242TR2PBF utilizes a single gate structure and consists of four active layers in the form of source, drain and two gates. The source and the drain are extremely thin layers of material deposited on the semiconductor substrate. They are the two main active elements of the FET, and the principal components responsible for controlling the flow of electrons through the device. They are connected to the electrical circuit via interelectrode capacitance, making them ideal for use in high frequency circuits. The two gates are separated by a thin insulating layer of silicon dioxide. One of the gates is the control gate, used to modulate the current flow between the source and the drain. The other gate is the bulk gate, and is used to modulate the current by controlling the physical shape of the electrical capacitance between the source and the drain terminals. The main principle of operation of the IRFHS8242TR2PBF is based on the depletion-mode principle of MOSFETs. A small current applied to the control gate produces a large depletion region around the source and the drain. This depletion region serves to modulate the resistance of the FET, and consequently, the current flow. A larger control gate current results in the depletion region growing larger and causing the resistance to drop, while a smaller control gate current causes a small depletion region and an increase in resistance. The IRFHS8242TR2PBF also has a low source-drain resistance as compared to other MOSFETs of its type. This allows for better control of the current flow through the device, and makes it ideal for applications which require for precise control of power delivery. As for specific application fields, the IRFHS8242TR2PBF is used in a variety of scenarios where efficient and reliable power delivery, switching and amplification are required. This includes devices such as smartphones, TV test sets, network routers, digital logic circuits, and pulse power circuits. In conclusion, the unique characteristics of the IRFHS8242TR2PBF make it well suited for a wide range of applications, particularly those where power management, switching, or amplification are required. It is capable of delivering a low input voltage while performing a wide range of power management tasks, thanks to its utilization of the depletion-mode principle of MOSFETs and its low source-drain resistance. In this way, the IRFHS8242TR2PBF is an important and widely used component in many consumer electronic devices.

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