IPD90N06S407ATMA1

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The IPD90N06S407ATMA1 is a popular field-effect transistor (FET) device. This is a single high-current N-channel FET, meant for applications where high speed and good performance are required. It is designed to be used in applications such as in power management, motor control, audio compression, power conversion, and power supplies.

This single N-channel FET is composed of a source, a drain, and a gate. From the gate, an electrical potential is applied, which when applied in the right direction and at the proper voltage, can control current flow from the source to the drain. When the potential is in the same direction as current flow, current flow is increased and when the potential is opposite, then current flow is decreased. It is this ability to turn a current flow on or off with the application of an electrical potential at the gate that makes this FET so useful in so many applications.

The IPD90N06S407ATMA1 FET has an on-state resistance (Rds(on)) of 0.4 Ohms, which is low enough for its use in high-power applications. It also has a maximum drain-source voltage (Vds) of 40V, which is suitable for applications that require very high control. Furthermore, it can handle a continuous drain current (Id) at 25A and peak drain current at 4A. This is great for controlling motor currents, as peak currents can be up to four times larger than the continuous current rating.

This FET is also designed to handle high operating temperatures. It has a maximum operating temperature of 175°C, allowing it to be used in applications that generate a lot of heat. Additionally, it also has a thermal resistance junction-to-case (Rjc) of 0.91°C/W, providing excellent thermal performance in high-temperature applications.

One of the key advantages of the IPD90N06S407ATMA1 FET is its fast switching speed. It has a fast switching time of 5ns, allowing it to respond to rapid changes in the electrical input signals applied to the gate. This makes it ideal for use in high-speed pulsed applications, such as in audio compression and high-frequency power conversion circuits. It also has very good switching efficiency, with a drain-source energy (Es) of 22 Joules, meaning that it can handle high-power and high current switching with minimal loss.

The IPD90N06S407ATMA1 FET is a great choice for applications that require high-speed, good performance, and the ability to handle large amounts of power. It has a low on-state resistance and high drain-source voltage, allowing it to efficiently control motor and power converter currents. Additionally, its fast switching speed, low thermal resistance, and high switching efficiency make it well suited for audio compression, power conversion, and power supply applications where a high level of performance is required.

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