IRF6728MTR1PBF

Vgs(th) (Max) @ Id:	2.35V @ 100µA
Package / Case:	DirectFET™ Isometric MX
Supplier Device Package:	DIRECTFET™ MX
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Ta), 75W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4110pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	42nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	2.5 mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	23A (Ta), 140A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF6728MTR1PBF is an advanced n-channel depletion-mode power metal-oxide-semiconductor field-effect transistor (MOSFET). It belongs to a family of devices developed and manufactured by Vishay, a leading manufacturer in the field of semiconductors and other related components. IRF6728MTR1PBF is designed primarily for high-speed switching and linear power conversion application due to its low on-resistance, low gate charge, and fast switching times.IRF6728MTR1PBF is designed to operate in the so-called depletion mode, which means that it requires a relatively low gate-source voltage (VGS) to turn it on. This makes it suitable for applications where the MOSFET needs to be switched quickly and with a minimum amount of additional circuitry. The collection-drain voltage (VDS) can reach up to 40V and the device can support a current ranging from -2.2 amperes (A) to +3A making it suitable for many power applications.The internal architecture of the IRF6728MTR1PBF device is composed of source and drain regions, the gate oxide layer, and the MOSFET channel. The device is a three-terminal device, with the source, drain and gate, where a voltage applied to the gate will control the current between the drain and the source. The gate oxide layer works to prevent the charges from moving easily and provides electrical insulating properties.When the gate is at a high voltage, the free electrons in the MOSFET channel will become attracted to the electrostatic field created by the gate and form an inversion layer near the gate surface. This inversion layer forms a channel in the MOSFET, which allows electric current to flow from the source to the drain. This is the basis of the working principle of an n-channel MOSFET device.The low on-resistance of the IRF6728MTR1PBF allows it to handle large currents with a minimum amount of power dissipation, while its high current-handling capability and low threshold voltage allows it to be used in applications where high power transistors are required, such as power conversion circuits.The IRF6728MTR1PBF is suitable for applications such as DC-DC and AC-DC bridges, power switch drivers, DC-DC converters, and high-efficiency switching power supplies. The power switch drivers are typically used in a wide range of applications, such as motor control, lighting, display dimming, and audio equipment.In summary, the IRF6728MTR1PBF device is a modern n-channel MOSFET device used for switching and linear power conversion applications. It has a low on-resistance and high current-handling capability, making it suitable for applications such as DC-DC and AC-DC bridges, power switch drivers, DC-DC converters, and high-efficiency switching power supplies.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description