FQPF13N50C_F105

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The FQPF13N50C_F105 is a Field-Effect Transistor (FET) manufactured by Fairchild Semiconductor. It is a single N-Channel Power MOSFET intended for use in portable applications and high-current, low-voltage motor control.

The FQPF13N50C_F105 is a popular choice for various applications, such as DC-AC inverter and low voltage power switching. It is manufactured using the advanced PowerTrench process, which results in high dv/dt capability and low EMI/RFI noise.

The FQPF13N50C_F105 has an especially attractive package density in comparison to other MOSFETs for this type of application. It has a low on-resistance (RDS(on)) and the device is rated at 50V, 13A.

The FQPF13N50C_F105 does not require a body diode for operation as it has an integrated body diode for reverse current protection. This feature reduces the losses in conduction mode, allowing it to handle much greater power levels than conventional power MOSFETs.

The gate drive features of the FQPF13N50C_F105 are designed to reduce power loss in driving the gate of the FET and to provide protection against overdrive and electrostatic discharge (ESD). The FQPF13N50C_F105 is also equipped with an integrated Over-Current Protection (OCP) circuit to prevent damaging current surges.

The working principle of the FQPF13N50C_F105 is based on charge control. An external voltage is applied between the source and drain terminals of the MOSFET which results in an electric field between them. This electric field is controlled by the voltage applied to the gate terminal, allowing or stopping the flow of electrons from the source to the drain, thereby controlling the current flow.

The FQPF13N50C_F105 offers a wide range of features and benefits, making it an ideal choice for use in portable and consumer applications. Its advanced PowerTrench process allows it to offer improved efficiency, rugged operation, and low EMI noise, while its integrated gate drive and OCP features enhance system-level protection and minimize power loss. Additionally, its low RDS(on) and integrated body diode allow it to handle higher power levels than conventional power MOSFETs.

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