Allicdata Part #: | FQPF10N60C_F105-ND |
Manufacturer Part#: |
FQPF10N60C_F105 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IC POWER MANAGEMENT |
More Detail: | N-Channel 600V 9.5A (Tc) 50W (Tc) Through Hole TO-... |
DataSheet: | FQPF10N60C_F105 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 730 mOhm @ 4.75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 2040pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
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,FQPF10N60C_F105 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) belonging to the family of single transistors. It is particulalry suitable to perform switching and power regulation tasks with low voltage and low power consupmtion features. The device is buily-in a packagge allowing to achive high efficiency.
The working principle of a FQPF10N60C_F105 is based on the field effect transistors design, in which a voltage applied between the gate and the source (input of the device), produces an interchange of charge carriers between the source and the drain (output of the device).
FQPF10N60C_F105 has many applications in which one can exploit its power regulation capabilities. For instance, in power converters and power supplies, FQPF10N60C_F105 is often used as a switcher for power control, to regulate the output current or voltage. The transistor provides a low On-Resistance, allowing to transfer large currents with an efficiency up to 90%. Moreover, the high current carrying capacity means that more power can be switched in the same package without requiring additional components.
FQPF10N60C_F105 features high switching frequency operation. This makes it ideal for Power Factor Correction, where a high switching speed makes it possible to achieve a very high power factor. Furthermore, the low threshold voltage ensures a low trigger current, thus further lowering power consumption.
FQPF10N60C_F105 is also suitable for applications in Motor Drives. In this case, the device can be used as a power switch to control the speed of motors. FQPF10N60C_F105 can be used in combination with a control system to regulate the speed, direction and position of a motor. Furthermore, the device can be used as an inverter, where it will be switched at a high frequency for power control.
In addition, the FQPF10N60C_F105 can be used in high power logic circuitry. This makes it suitable for controlling high power loads, such as lights, heating elements, etc. When combined with a digital interface, the device can be used as a part of a closed-loop control system.
Finally, FQPF10N60C_F105 can also be used in RF RF applications. Due to the very low On-Resistance, the device can be used to switch high frequency signals with high efficiency. This makes it an ideal component for low power RF applications.
In summary, FQPF10N60C_F105 is suitable for a number of applications, where its power regulation capabilities can be exploited. The device is highly efficient, making it an ideal component for low voltage and high power applications. Additionally, FQPF10N60C_F105\'s low threshold voltage and high switching frequency make it ideal for power factor correction and motor drives.
The specific data is subject to PDF, and the above content is for reference
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