Allicdata Part #: | APTM100U13SG-ND |
Manufacturer Part#: |
APTM100U13SG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1000V 65A J3 |
More Detail: | N-Channel 1000V 65A (Tc) 1250W (Tc) Chassis Mount ... |
DataSheet: | APTM100U13SG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 10mA |
Package / Case: | J3 Module |
Supplier Device Package: | Module |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 31600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 2000nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 145 mOhm @ 32.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Bulk |
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The APTM100U13SG is a high-precision, low-power depletion-mode MOSFET. It is designed to offer exceptionally high performance in low-voltage applications such as portable/pocket devices, consumer electronics and smart grid applications. The device features ultra-low RDS(on) of 0.1 ohms combined with a maximum gate charge of 46nC, offering superior performance in terms of power efficiency, size and cost.
The APTM100U13SG is rated for a maximum drain-source voltage of 10V, with a maximum ID rating of 1A. This makes it the ideal choice for use in battery-powered, low-noise applications, as well as for power switching applications. It is a highly reliable device, capable of withstanding operating temperatures of up to 125°C.
The APTM100U13SG is a single-gate MOSFET, meaning it has just one gate pin, allowing it to be easily integrated into miniaturized systems such as smartphones, wearables and other small devices. This makes the APTM100U13SG a great choice for designers looking to reduce the size and cost of their designs.
The APTM100U13SG is widely used in a variety of applications due to its power efficiency and low operating voltages. It can be used in automotive, audio, gaming, medical and industrial applications, making it a highly versatile device. For example, in automotive applications, APTM100U13SG can be used as a power switch to drive LEDs, and provide protection from short circuits.
The APTM100U13SG works on the principle of depletion-mode MOSFETs. This type of MOSFET uses an internal field effect transistor (FET) which functions as a resistor until voltage is applied to the gate electrode. Once the gate voltage is applied, the FET becomes conductive, and the current passing through the FET increases. Thus, the current is controlled by the applied gate voltage. The APTM100U13SG is optimized for low-voltage applications as the internal FET is controlled without the need for an external current source.
The APTM100U13SG offers superior performance with minimum power consumption and is an ideal choice for portable/pocket devices, consumer electronics and smart grid applications. With its high-precision, low-power characteristics, it is the perfect choice for designers looking to reduce the size and cost of their designs.
The specific data is subject to PDF, and the above content is for reference
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