FDMC6683PZ

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The FDMC6683PZ is a type of N-Channel Enhacement Mode (EN) Metal-Oxide-semiconductor Field-Effect Transistor (MOSFET). It has the capabilities of providing low output resistance and excellent switching performance, making it suitable for a variety of applications that require high-speed switching signals. This includes handling high-current and low-voltage applications that require low RDS ON value and excellent thermal stability.

The PZ suffix of the FDMC6683PZ is indicative of a P-Channel main body type, which is a design feature that allows this particular MOSFET to be used in applications requiring signals to be transmitted and received in both directions. As the P-Channel body type increases the gate capacitance of the device, and hence increases the time it takes for the gate signal to reach the source, the input impedance and switching speed are both optimized by this design choice.

The FDMC6683PZ has a Drain-Source Breakdown (BV DS ) voltage rating of 40V, with a Maximum Drain Current (ID) at 10V, 25° from zero voltage (Vgs=0V) of 1.2A. This device, with its high current capability, can handle larger than normal operating currents, making it very suitable for applications that require higher current switching and load-handling ability. The On-Resistance (R DSON) of the device is a very low 0.42Ω at 4.5 V, making it capable of delivering very low switching losses.

The maximum power dissipation (PD) rating of the FDMC6683PZ is 1.5W, and the typical Threshold (VGS) voltage is -1.3V. The On-State Drain-Source Voltage and Gate-Source voltage of the device are 10V and 15V respectively. The device has an Inductive Switching rating of 5.5A at 10V, and the typical voltage drop across the device when switched is 2V for Drain-Source voltage and 4V for Gate-Source voltage. This suggests that the device is able to deliver excellent switching performance with low losses.

To summarize, the FDMC6683PZ is an EN-type N-Channel MOSFET that is designed to work as an electrical switch. It has a P-Channel main-body design which improves its capacitance and hence Switching speed and input impedance. The device has outstanding current handling capability along with low On-resistance and excellent thermal stability, which make it suitable for applications requiring higher current load-handling and switching. It is particularly suitable for applications that require signals to be transmitted and received in both directions due to its P-Channel main-body type. With its high quiescent current, low On-resistance, and excellent switching performance, the FDMC6683PZ is an ideal choice for MOSFETs.

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