Allicdata Part #: | FDMC7672_F125-ND |
Manufacturer Part#: |
FDMC7672_F125 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IC POWER MANAGEMENT |
More Detail: | N-Channel 30V 16.9A (Ta), 20A (Tc) 2.3W (Ta), 33W ... |
DataSheet: | FDMC7672_F125 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-MLP (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.3W (Ta), 33W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3890pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
Series: | PowerTrench®, SyncFET™ |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 16.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16.9A (Ta), 20A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The FDMC7672_F125 is a single-N-Channel Field Effect Transistor (FET) transistor that is used in a variety of power management applications, as well as in industrial and consumer electronics. As a single-gate FET, it features a regular N-channel with a P-channel connected to it, each operating independently. This type of FET can be used in power circuits to switch on and off specific current paths.
As with most FETs, FDMC7672_F125 has an advantage of low on-resistance. Therefore, the amount of power it requires to turn on and off the desired current path is minimal. These FETs are typically used when high current needs to be switched with a small datasheet power. Additionally, its high switching speed, high operating temperature and low on-resistance make it suitable for applications where a low-power, reliable connection is important.
Power MOSFETs are available in different structures, such as N-channel and P-channel, which are the two most popular. The FDMC7672_F125 is a single-N-channel FET transistor comprising two independent channels, one N-channel and one P-channel. As a result of its dual channel construction, it features faster switching speeds and higher current carrying capacities.
The source of the FET is always connected to the source terminal, whereas its drain is connected to either the drain terminal, or it\'s biased to control the FET\'s functionality. As the gate terminal is not connected to a power supply, no current is drawn by the gate terminal. Therefore, the junction potential between the source and drain terminals controls the flow of current from the drain to the source.
The purpose of the FET is to regulate the current in a specific direction, depending on the gate potential. By changing the gate’s voltage, the current through the FET can be modified, and it can either allow current to flow or not. When the gate voltage is high, the FET will be open, allowing for current flow. When the gate voltage is low, the FET will shut off, blocking current flow.
The FDMC7672_F125 is most commonly used in power circuits to switch on and off certain currents. It can also be used in high current applications where its low on-resistance and high current carrying capacity make it a suitable choice. Moreover, its fast switching speed and high operating temperature make it suitable for use in applications where a reliable and low-power connection is important.
In addition to its usage in power management applications, the FDMC7672_F125 can also be used in industrial and consumer electronics. This type of FET is typically used in applications where a stable current flow needs to be maintained, or in cases where controlling the voltage between two points is important. This FET is a reliable and reliable technology that offers high performance and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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