Allicdata Part #: | APT25SM120S-ND |
Manufacturer Part#: |
APT25SM120S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | POWER MOSFET - SIC |
More Detail: | N-Channel 1200V 25A (Tc) 175W (Tc) Chassis Mount D... |
DataSheet: | APT25SM120S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1200V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Rds On (Max) @ Id, Vgs: | 175 mOhm @ 10A, 20V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 175W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | D3 |
Package / Case: | D-3 Module |
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The APT25SM120S is an advanced single N-Channel MOSFET. This device has been designed specifically for switching applications and offers a wide range of features and characteristics that make it a very cost-effective choice for a variety of designs. This article will discuss the various applications of the device, its working principles and features, and will also provide an example design.
Applications
The APT25SM120S transistor can be used for a wide range of applications, including power switching, motor control, lighting control, DC/DC converter control and other switching applications. It is specifically designed for high power switching and offers a low on-resistance of just 25mOhms. This allows for high efficiency switching and enables a wide range of applications. The maximum power dissipation of this device is 120 watts and it can handle currents up to 8.8A, making it ideal for a variety of applications.
The device is also capable of operating at high frequencies (up to 20kHz), making it suitable for switching applications operating at higher frequencies. Furthermore, the device operates with a low gate charge (3nC typical) and is capable of withstanding a peak voltage of 250V, making it suitable for a variety of switching applications.
Working Principle and Features
The APT25SM120S is an N-Channel device that is capable of both source and drain acting as the source. The main feature of this type of MOSFET is its fast switching time, which is achieved by the generally very low input capacitance. The APT25SM120S has a low gate-to-source capacitance of just 5pF (typical). This helps to reduce the switching time of the device, making it suitable for high frequency applications. It is also capable of operating up to a peak voltage of 250V.
The APT25SM120S is also a high power device, with a maximum power dissipation of 120W. This makes it suitable for higher power applications, such as motor control, lighting control and other high power switching applications. Additionally, the device has a low on-resistance of just 25mOhms, allowing for high efficiency switching. The device is also RoHS compliant and is capable of operating in temperatures ranging from -55°C to +150°C.
Example Design
A simple example circuit using the APT25SM120S transistor is shown in Figure 1. This circuit is a simple DC/DC converter design and operates at a switching frequency of 20kHz. The APT25SM120S is used as the main power switch, with the MOSFET being driven by a PWM signal generated by an MCU. A low value of load capacitance is used to keep the switching time of the device low. The output voltage of this circuit can be adjusted by varying the duty cycle of the PWM signal.
In conclusion, the APT25SM120S transistor is a cost-effective and flexible choice for a variety of designs, including power switching, motor control and lighting control. It features a low on-resistance and a low gate-to-source capacitance, enabling fast switching times, as well as a wide operating temperature range and a maximum power dissipation of 120W. An example of a DC/DC converter circuit using the APT25SM120S is also given to demonstrate the device’s capabilities.
The specific data is subject to PDF, and the above content is for reference
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